VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
TO-118 (TO- 209AE)
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
300 A
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
J
T
C
Package
Circuit configuration
400 V, 800 V, 1200 V
2.16 V
3000 A
3150 A
200 mA
-40 °C to 125 °C
65 °C
TO-118 (TO-209AE)
Single SCR
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
300
65
471
7950
8320
316
288
400 to 1200
10 to 20
-40 to 125
kA
2
s
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-ST303S
08
12
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK VOLTAGE
V
400
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1300
50
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
Revision: 22-Aug-17
Document Number: 94375
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
R
Voltage before turn-on V
D
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
670
480
230
35
50
V
DRM
50
40
10/0.47
470
330
140
-
1050
1021
760
150
50
V
DRM
-
940
710
470
-
5240
1800
730
90
50
V
DRM
-
4300
1270
430
-
V
A/μs
65
10/0.47
°C
μF
A
65
40
10/0.47
65
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 45 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
300
65
471
7950
8320
6690
Sinusoidal half wave,
initial T
J
= T
J
maximum
7000
316
288
224
204
3160
2.16
1.44
1.46
0.57
0.56
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 1255 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt = 200 V/μs
VALUES
1000
0.80
10
20
μs
UNITS
A/μs
Revision: 22-Aug-17
Document Number: 94375
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage
current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.10
0.03
48.5
(425)
535
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-118 (TO-209AE)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.011
0.013
0.017
0.025
0.041
RECTANGULAR CONDUCTION
0.008
0.014
0.018
0.026
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 22-Aug-17
Document Number: 94375
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
0
100
200
300
400
500
Average On-state Current (A)
30°
60°
90°
120°
180°
Conduction Period
Maximum Allowable Case T
emperature (°C)
130
120
110
100
90
80
70
60
0
50
100
150
200
250 300
350
Average On-state Current (A)
Conduc tion Angle
S 303SS
T
eries
R
thJC
(DC) = 0.10 K/ W
S 303SS
T
eries
R
(DC) = 0.10 K/ W
thJC
30°
60°
90°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
600
h
R
t
03
0.
500
400
300
200
180°
120°
90°
60°
30°
R Limit
MS
Conduction Angle
K/
W
0.
08
K
0.
/ W
12
K/
W
0.1
6K
/W
0.2
K/
W
0.3
K/ W
0.5 K
/
W
0.
06
W
K/
SA
=
01
0.
W
K/
ta
el
-D
R
100
0
0
50
100
150
S 303SS
T
eries
T = 125°C
J
200
250
25
300
50
75
100
125
Average On-state Current (A)
Maximum Allowab le Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
900
800
700
600
500
400
300
DC
180°
120°
90°
60°
30°
R
A
=
0.
0.
03
01
K/
K/
W
W
0.
06
-D
K/
el
W
ta
th
S
0.1
2
R
RMSLimit
Conduction Period
200
100
0
0
S 303SS
T
eries
T = 125°C
J
K/ W
0.2
K/ W
0.3
K/ W
0.5 K
/W
25
50 100 150 200 250 300 350 400 450 500
Average On-state Current (A)
50
75
100
125
Maximum Allowab le Ambient T
emperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 22-Aug-17
Document Number: 94375
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
T
ransient T
hermal Impedance Z
thJC
(K/ W)
1
S
teady S
tate Value
R
thJC
= 0.10 K/ W
(DC Operation)
0.1
Peak Half S Wave On-s
ine
tate Current (A)
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
At Any R
ated Load Condition And With
R
ated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
0.01
S 303SS
T
eries
S 303S S
T
eries
10
100
0.001
0.001
0.01
0.1
1
10
Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N)
S
quare Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Peak Half S Wave On-state Current (A)
ine
8000
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Non Repetitive S
urge Current
7500
Versus Pulse T
rain Duration. Control
Of Conduc tion May Not Be Maintained.
7000
Initial T = 125°C
J
No Voltage Reapplied
6500
Rated V
RRM
Reapplied
6000
5500
5000
4500
4000
S 303SS
T
eries
3500
3000
0.01
0.1
Pulse T
rain Duration (s)
1
320
300
280
260
240
220
200
180
160
140
120
100
80
10
20 30
I
T
M
= 500 A
300 A
200 A
100 A
50 A
S 303S S
T
eries
T = 125 °C
J
40 50
60 70 80
90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Charge Characteristics
Maximum R
everse R overy Current - Irr (A)
ec
10000
Instantaneous On-state Current (A)
180
160
140
120
100
80
60
40
20
10
S 303S S
T
eries
T = 125 °C
J
I
T
= 500 A
M
300 A
200 A
100 A
50 A
1000
T = 25°C
J
T = 125°C
J
S 303S S
T
eries
100
1
2
3
4
5
6
7
8
Instantaneous On-state Voltage (V)
20 30
40 50
60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 22-Aug-17
Document Number: 94375
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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