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TSZU52C30

Description
Zener Diodes 30 Volt 150mW 10%
CategoryDiscrete semiconductor    diode   
File Size174KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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Zener Diodes 30 Volt 150mW 10%

TSZU52C30 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-N2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-N2
JESD-609 codee4
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
Nominal reference voltage30 V
surface mountYES
technologyZENER
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum voltage tolerance5%
Working test current5 mA
TSZU52C2V0 - TSZU52C39
Taiwan Semiconductor
Small Signal Product
SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 2.0V to 39V
- Designed for mounting on small surface
- Extremely thin / leadless package
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
0603
MECHANICAL DATA
- Case: 0603
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 3 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
SYMBOL
P
D
V
F
I
FSM
T
J
, T
STG
VALUE
150
0.9
2
-55 to +125
UNIT
mW
V
A
°C
@ I
F
= 10mA
Forward Current, Surge Peak 8.3 ms Single Half
Sine-Wave Superimposed on Rate Load
Junction and Storage Temperature Range
Version: F1601

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Index Files: 1305  1467  1669  914  1439  27  30  34  19  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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