APTGLQ200HR120G
Phase Leg & Dual Common Emitter
Power Module
Fast Trench & Field Stop IGBT4 (Q1, Q2):
V
CES
= 1200V ; I
C
= 200A @ Tc = 80°C
Trench & Field Stop IGBT3 (Q3, Q4):
V
CES
= 600V ; I
C
= 100A @ Tc = 80°C
V POS
Q1
CR1
G1
E1
Q2
CR2 G3
G2
E3
E2
E4
V NEG
G4
CR4
Q4
Q3
CR3
V OUT
Application
•
Uninterruptible Power Supplies
Features
•
Q1, Q2 (High speed Trench & Field Stop IGBT4)
•
Q3, Q4 (Trench & Field Stop IGBT3)
- Low voltage drop
- Low tail current
- Low leakage current
- RBSOA and SCSOA rated
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
V GND
Benefits
•
Stable temperature behavior
•
Very rugged
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive T
C
of V
CEsat
•
Low profile
•
RoHS Compliant
All ratings @ T
j
= 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1 - 10
APTGLQ200HR120G –Rev 3 December, 2014
APTGLQ200HR120G
1. High speed Trench & Field Stop IGBT4 Phase Leg Q1&Q2 (per IGBT)
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
Max ratings
1200
300
200
640
±20
1000
320A @ 1100V
Unit
V
A
V
W
T
j
= 150°C
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
=15V
I
C
= 160A
T
j
= 150°C
V
GE
= V
CE
, I
C
= 4 mA
V
GE
= 20V, V
CE
= 0V
Min
1.7
5.0
Typ
2.05
2.6
5.8
Max
200
2.4
6.5
480
Unit
µA
V
V
nA
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
Q
G
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
I
sc
R
thJC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit data
Junction to Case Thermal Resistance
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
= 15V, I
C
= 160A
V
CE
= 960V
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 160A
R
G
= 3Ω
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 160A
R
G
= 3Ω
T
j
= 25°C
V
GE
= ±15V
V
Bus
= 600V
T
j
= 150°C
I
C
= 160A
T
j
= 25°C
R
G
= 3Ω
T
j
= 150°C
V
GE
≤15V
; V
Bus
= 600V
t
p
≤10µs
; T
j
= 150°C
Min
Typ
9200
600
540
740
30
57
290
16
30
49
366
48
12.6
15
4.8
9
600
0.15
mJ
APTGLQ200HR120G –Rev 3 December, 2014
Max
Unit
pF
nC
ns
ns
A
°C/W
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2 - 10
APTGLQ200HR120G
Diode ratings and characteristics
(D1 & D2) (per diode)
Symbol Characteristic
V
RRM
I
RM
I
F
V
F
t
rr
Q
rr
E
rr
R
thJC
Peak Repetitive Reverse Voltage
Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Junction to Case Thermal Resistance
I
F
= 150A
V
R
= 600V
I
F
= 150A
V
R
=1200V
Tc = 50°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
180
1.7
1.65
155
300
14.6
30.4
5.2
11
0.32
Test Conditions
Min
Typ
Max
1200
200
2.2
Unit
V
µA
A
V
ns
µC
mJ
°C/W
di/dt =3800A/µs
2. Trench & Field Stop IGBT3 Dual common emitter Q3&Q4 (per IGBT)
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 150°C
Max ratings
600
150
100
200
±20
340
200A @ 550V
Unit
V
A
V
W
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
T
j
= 25°C
V
GE
=15V
I
C
= 100A
T
j
= 150°C
V
GE
= V
CE
, I
C
= 1.5 mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.5
1.7
5.8
Max
250
1.9
6.5
400
Unit
µA
V
V
nA
5.0
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3 - 10
APTGLQ200HR120G –Rev 3 December, 2014
APTGLQ200HR120G
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
Q
G
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
I
sc
R
thJC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit data
Junction to Case Thermal Resistance
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
= ±15V, I
C
= 100A
V
CE
= 300V
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 100A
R
G
= 3.3Ω
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 100A
R
G
= 3.3Ω
V
GE
= ±15V T
j
= 25°C
V
Bus
= 300V T
j
= 150°C
I
C
= 100A
T
j
= 25°C
R
G
= 3.3Ω
T
j
= 150°C
V
GE
≤15V
; V
Bus
= 360V
t
p
≤10µs
; T
j
= 150°C
Min
Typ
6100
390
190
1.1
115
45
225
55
130
50
300
70
0.4
0.875
2.5
3.5
500
0.45
Max
Unit
pF
µC
ns
ns
mJ
mJ
A
°C/W
Diode ratings and characteristics
(D3 & D4) (per diode)
Symbol Characteristic
V
RRM
I
RM
I
F
V
F
t
rr
Q
rr
E
r
R
thJC
Peak Repetitive Reverse Voltage
Reverse Leakage Current
DC Forward current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Junction to Case Thermal Resistance
I
F
= 150A
V
R
= 300V
I
F
= 150A
V
GE
= 0V
V
R
=600V
Tc = 25°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
150
1.6
1.5
130
225
6.5
14.5
1.6
3.5
0.52
Test Conditions
Min
Typ
Max
600
250
2
V
ns
µC
mJ
°C/W
APTGLQ200HR120G –Rev 3 December, 2014
Unit
V
µA
A
di/dt =3000A/µs
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4 - 10
APTGLQ200HR120G
3. Thermal & Package characteristics
Symbol
V
ISOL
T
J
T
JOP
T
STG
T
C
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To heatsink
M6
Mounting torque
For terminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
175
T
J
max -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
High speed Trench & Field Stop IGBT4 performance curve (per IGBT)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
150
120
ZVS
V
CE
=600V
D=50%
R
G
=3
Ω
T
J
=1
50°C
T
C
=75°C
ZCS
90
60
30
0
0
40
80
120
hard
switching
160
200
I
C
(A)
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5 - 10
APTGLQ200HR120G –Rev 3 December, 2014
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