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BSS123L — N-Channel Logic Level Enhancement Mode Field Effect Transistor
October 2014
BSS123L
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features
• 0.17 A, 100 V, R
DS(ON)
= 6
Ω
at V
GS
= 10 V
R
DS(ON)
= 10
Ω
at V
GS
= 4.5 V
• High Density Cell Design for Low R
DS(ON)
• Rugged and Reliable
• Compact Industry Standard SOT-23 Surface Mount
Package
• Very Low Capacitance
• Fast Switching Speed
Description
This N-channel enhancement mode field effect transistor
is produced using high cell density, trench MOSFET
technology. This product minimizes on-state resistance
while providing rugged, reliable and fast switching perfor-
mance. This product is particularly suited for low-voltage,
low-current applications such as small servo motor con-
trol, power MOSFET gate drivers, logic level transistor,
high speed line drivers, power management/power sup-
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