Rev.
2.2
BSP88
SIPMOS
Ò
Small-Signal-Transistor
Feature
·
N-Channel
·
Enhancement mode
·
Logic Level
·
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
240
6
0.35
PG-SOT223
4
V
W
A
•
Pb-free lead plating; RoHS compliant
Pb-free lead
•
2.8V rated
plating; RoHS compliant
Qualified according to AEC Q101
•
Halogenfree according to IEC61249221
3
2
1
VPS05163
Type
BSP88
Package
PG-SOT223
Tape and Reel Information
Marking
BSP88
Packaging
Non dry
H
6327:
1000
pcs/reel
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.35
0.28
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
1.4
6
±20
1A (>250V, <500V)
1.8
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.35A,
V
DS
=192V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD
class (JESD22-A114-HBM)
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2012-11-29
Rev.
2.2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSP88
Symbol
min.
R
thJS
R
thJA
-
-
-
-
115
70
-
Values
typ.
-
max.
25
K/W
Unit
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
R
DS(on)
-
-
-
-
240
0.6
Values
typ.
-
1
max.
-
1.4
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=108µA
Zero gate voltage drain current
V
DS
=240V,
V
GS
=0,
T
j
=25°C
V
DS
=240V,
V
GS
=0,
T
j
=150°C
µA
-
-
1
4.9
4.6
4
0.1
10
10
15
7.5
6
nA
W
Gate-source leakage current
V
GS
=20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=2.8V,
I
D
=0.014A
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.32A
Drain-source on-state resistance
V
GS
=10V,
I
D
=0.35A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page
2
2012-11-29
Rev.
2.2
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=
I
S
V
R
=120V,
I
F=
l
S
,
di
F
/dt=100A/µs
BSP88
Values
min.
typ.
0.38
76
12
6
3.6
3.5
17.9
18.9
max.
-
95
15
9
5.4
5.2
26.8
28.3
ns
S
pF
Unit
Symbol
Conditions
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
gs
Q
gd
Q
g
V
DS
³2*I
D
*R
DS(on)max
,
I
D
=0.28A
V
GS
=0,
V
DS
=25V,
f=1MHz
0.19
-
-
-
-
-
-
-
V
DD
=120V,
V
GS
=4.5V,
I
D
=0.35A,
R
G
=15W
V
DD
=192V,
I
D
=0.35A
-
-
-
-
0.2
2
4.5
2.7
0.3
3
6.8
-
nC
V
DD
=192V,
I
D
=0.35A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=192V,
I
D
= 0.35 A
I
S
V
T
A
=25°C
-
-
-
-
-
-
-
0.86
66
119
0.35
1.4
1.2
82
149
A
V
ns
nC
Page
3
2012-11-29
Rev.
2.2
1 Power dissipation
P
tot
=
f
(T
A
)
1.9
BSP88
BSP88
2 Drain current
I
D
=
f
(T
A
)
parameter:
V
GS
³
10 V
0.38
BSP88
W
1.6
1.4
A
0.32
0.28
P
tot
1
0.8
0.6
0.4
0.2
0
0
I
D
°C
1.2
0.24
0.2
0.16
0.12
0.08
0.04
0
0
20
40
60
80
100
120
160
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
BSP88
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP88
A
t
p = 160.0µs
K/W
10
0
S(
on
)
/
I
D
1 ms
R
D
10
-1
10 ms
Z
thJA
10
0
=
V
D
S
10
1
I
D
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-2
DC
10
-1
single pulse
10
-3 0
10
10
1
10
2
V
10
3
10
-2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
V
DS
Page
4
t
p
2012-11-29
Rev.
2.2
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j
= 25 °C,
V
GS
0.64
BSP88
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
9
3.4V
3.8V
4V
0.48
4.4V
5V
6V
0.4
7V
10V
0.32
A
3.2V
W
7
R
DS(on)
6
5
4
3.4V
3.8V
4.4V
5V
6V
7V
10V
2.6V
3.2V
I
D
2.6V
0.24
3
0.16
2
1
0
0
0.08
0
0
0.5
1
1.5
2
2.5
3
V
V
DS
4
0.08 0.16 0.24 0.32
0.4
0.48
A
I
D
0.64
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
³
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
0.64
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
0.6
A
S
0.48
I
D
0.4
0.32
g
fs
0.5
1
1.5
2
2.5
3.5
0.4
0.3
0.24
0.2
0.16
0.1
0.08
0
0
V
0
0
0.08 0.16 0.24 0.32
0.4
0.48
V
GS
Page
5
A
I
D
0.64
2012-11-29
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