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BD787G

Description
Thermal Interface Products TO-247, 0.750X1.0 H.140,T-gard 5000-A0
CategoryDiscrete semiconductor    The transistor   
File Size93KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BD787G Overview

Thermal Interface Products TO-247, 0.750X1.0 H.140,T-gard 5000-A0

BD787G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-225
package instructionROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID1133578
Samacsys Pin Count3
Samacsys Part CategoryTransistor BJT NPN
Samacsys Package CategoryTransistor Outline, Vertical
Samacsys Footprint NameTO-225 CASE 77-09
Samacsys Released Date2018-03-15 16:44:28
Is SamacsysN
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-225
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
BD787G (NPN),
BD788G (PNP)
Complementary Plastic
Silicon Power Transistors
These devices are designed for lower power audio amplifier and
low current, high−speed switching applications.
Features
http://onsemi.com
Low Collector−Emitter Sustaining Voltage
High Current−Gain − Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Continuous
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
15
0.12
T
J
, T
stg
–65 to +150
W
mW/_C
_C
Value
60
80
6.0
4.0
8.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
4 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 15 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
3
BASE
EMITTER 1
3
BASE
EMITTER 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−225
CASE 77−09
STYLE 1
1 2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
8.34
Unit
_C/W
MARKING DIAGRAM
YWW
BD78xG
Y
= Year
WW
= Work Week
BD78x = Device Code
x = 7 or 8
G
= Pb−Free Package
ORDERING INFORMATION
Device
BD787G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BD788G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 13
Publication Order Number:
BD787/D

BD787G Related Products

BD787G BD788G
Description Thermal Interface Products TO-247, 0.750X1.0 H.140,T-gard 5000-A0 Bipolar Transistors - BJT BIP PNP 4A 60V
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-225 TO-225
package instruction ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
Contacts 3 3
Manufacturer packaging code 77-09 77-09
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 1 week 1 week
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 5 5
JEDEC-95 code TO-225 TO-225
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 15 W 15 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
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