TC4426/TC4427/TC4428
1.5A Dual High-Speed Power MOSFET Drivers
Features:
• High Peak Output Current: 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability: 1000 pF in
25 ns (typical)
• Short Delay Times: 40 ns (typical)
• Matched Rise and Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 4 mA
- With Logic ‘0’ Input – 400 µA
• Low Output Impedance: 7
• Latch-Up Protected: Withstands 0.5A Reverse
Current
• Input Withstands Negative Inputs Up to 5V
• Electrostatic Discharge (ESD) Protected: 2.0 kV
• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN-S
Packages
General Description:
The TC4426/TC4427/TC4428 are improved versions
of the earlier TC426/TC427/TC428 family of MOSFET
drivers. The TC4426/TC4427/TC4428 devices have
matched rise and fall times when charging and
discharging the gate of a MOSFET.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
2.0 kV.
The TC4426/TC4427/TC4428 MOSFET drivers can
easily charge/discharge 1000 pF gate capacitances in
under 30 ns. These devices provide low enough
impedances in both the On and Off states to ensure the
MOSFET’s intended state is not affected, even by large
transients.
Other compatible drivers are the TC4426A/TC4427A/
TC4428A family of devices. The TC4426A/TC4427A/
TC4428A devices have matched leading and falling
edge input-to-output delay times, in addition to the
matched rise and fall times of the TC4426/TC4427/
TC4428 devices.
Applications:
• Switch Mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
Package Types
8-Pin MSOP/
PDIP/SOIC TC4426 TC4427 TC4428
NC
IN A
GND
IN B
1
8
NC
2
TC4426
7
OUT A
3
TC4427
6
V
DD
4
TC4428
5
OUT B
8-Pin DFN-S* TC4426 TC4427 TC4428
NC 1
IN A 2
GND 3
IN B 4
EP
9
8
7
6
5
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2006-2014 Microchip Technology Inc.
DS20001422G-page 1
TC4426/TC4427/TC4428
Functional Block Diagram
Inverting
1.5 mA
300 mV
Output
V
DD
Input
Effective
Input C = 12 pF
(Each Input)
GND
4.7V
Non-Inverting
TC4426/TC4427/TC4428
Note 1:
TC4426 has two inverting drivers, while the TC4427 has two non-inverting
drivers. The TC4428 has one inverting and one non-inverting driver.
2:
Ground any unused driver input.
DS20001422G-page 2
2006-2014 Microchip Technology Inc.
TC4426/TC4427/TC4428
1.0
ELECTRICAL
CHARACTERISTICS
†
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
+70°C)
DFN-S .....................................................................
Note 3
MSOP .....................................................................340 mW
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
Storage Temperature Range .........................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25ºC with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
2:
3:
I
S
—
—
—
—
4.5
0.4
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
t
R
t
F
t
D1
t
D2
—
—
—
—
19
19
20
40
30
30
30
50
ns
ns
ns
ns
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
7
1.5
> 0.5
—
0.025
10
—
—
V
V
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
Duty cycle2%, t
300
µs
V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
-1.0
—
—
—
—
0.8
+1.0
V
V
µA
0VV
IN
V
DD
Note 2
Sym.
Min.
Typ.
Max.
Units
Conditions
Switching times ensured by design.
For V temperature range devices, the V
IH
(Min) limit is 2.0V.
Package power dissipation is dependent on the copper pad area on the PCB.
2006-2014 Microchip Technology Inc.
DS20001422G-page 3
TC4426/TC4427/TC4428
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
2:
I
S
—
—
—
—
8.0
0.6
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
—
—
40
40
40
60
ns
ns
ns
ns
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
9
1.5
>0.5
—
0.025
12
—
—
V
V
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
Duty cycle2%, t
300
µs
V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
-10
—
—
—
—
0.8
+10
V
V
µA
0VV
IN
V
DD
Note 2
Sym.
Min.
Typ.
Max.
Units
Conditions
Switching times ensured by design.
For V temperature range devices, the V
IH
(Min) limit is 2.0V.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN-S
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
JA
JA
JA
JA
—
—
—
—
33.2
206
125
155
—
—
—
—
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
T
J
T
A
0
-40
-40
—
-65
—
—
—
—
—
+70
+85
+125
+150
+150
°C
°C
°C
°C
°C
Sym.
Min.
Typ.
Max.
Units
Conditions
DS20001422G-page 4
2006-2014 Microchip Technology Inc.
TC4426/TC4427/TC4428
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note:
Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
100
100
2200 pF
80
2200 pF
80
1500 pF
tRISE (nsec)
tFALL (nsec)
1500 pF
60
60
1000 pF
40
1000 pF
40
470 pF
20
20
470 pF
100 pF
100 pF
0
0
4
6
8
10
12
VDD
(V)
14
16
18
4
6
8
10
12
VDD (V)
14
16
18
FIGURE 2-1:
Voltage.
100
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
100
Fall Time vs. Supply
5V
5V
80
80
tRISE (nsec)
60
10V
15V
tFALL (nsec)
60
10V
15V
40
40
20
20
0
100
1000
CLOAD (pF)
10,000
0
100
1000
CLOAD (pF)
10,000
FIGURE 2-2:
Load.
60
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
80
75
70
65
60
55
50
45
40
35
30
25
20
4
6
8
Fall Time vs. Capacitive
Propagation Delay (nsec)
C LOAD = 1000 pF
C
LOAD
= 1000 pF
V
IN
= 5V
50
Time (nsec)
VDD = 17.5V
40
t
D2
30
tFALL
20
tRISE
t
D1
10
–55 –35 –15
10
12
14
16
18
5
25 45 65
Temperature (˚C)
85
105 125
V
DD
(V)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
FIGURE 2-6:
Supply Voltage.
Propagation Delay Time vs.
2006-2014 Microchip Technology Inc.
DS20001422G-page 5
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