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FJPF5021
FJPF5021
High Voltage and High Reliability
• High Speed Switching : t
F
= 0.1µs(Typ.)
• Wide SOA
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
800
500
7
5
10
2
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 2.5A, I
B1
= -I
B2
= 1A
L = 1mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.6A
V
CC
= 200V
I
C
= 5I
B1
= -2.5I
B2
= 4A
R
L
= 50Ω
80
15
0.5
3
0.1
0.3
15
8
Min.
800
500
7
500
10
10
50
1
1.5
V
V
pF
MHz
µs
µs
µs
Typ.
Max.
Units
V
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE1
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJPF5021
Typical Characteristics
5
100
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
4
I
B
= 1.2A
3
I
B
= 200mA
h
FE
, DC CURRENT GAIN
I
B
= 1A
10
2
I
B
= 100mA
I
B
= 50mA
1
I
B
= 20mA
0
0
2
4
6
I
B
= 0
8
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 5 I
B
t
STG
1
V
BE
(sat)
t
ON
, t
STG
, t
F
[
µ
s], TIME
1
t
ON
0.1
t
F
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
6
100
V
CE
= 5V
5
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
10
I
CP
(max)
I
C
(max)
50
µ
s
s
m
10
s
1m
0
µ
50
4
s
DC
1
3
2
0.1
1
0
0.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
A
3.40
3.20
B
10.36
9.96
7.00
B
3.28
3.08
2.66
2.42
0.70
SEE NOTE "F"
6.88
6.48
SEE NOTE "F"
1 X 45°
16.00
15.60
B
16.07
15.67
(3.23) B
1
2.14
10.05
9.45
3
1.47
1.24
0.90
0.70
0.50
M
30°
0.45
0.25
2.54
2.54
B
0.60
0.45
A
2.96
2.56
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
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