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NTLUD3191PZTAG

Description
MOSFET PFET WDFN6 20V 1.7A 250mOhm
CategoryDiscrete semiconductor    The transistor   
File Size135KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTLUD3191PZTAG Overview

MOSFET PFET WDFN6 20V 1.7A 250mOhm

NTLUD3191PZTAG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeDFN
package instructionSMALL OUTLINE, S-PDSO-N6
Contacts6
Manufacturer packaging code517AT
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)1.1 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTLUD3191PZ
Power MOSFET
Features
−20
V,
−1.8
A,
mCoolt
Dual P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
UDFN Package with Exposed Drain Pads for Excellent Thermal
http://onsemi.com
V
(BR)DSS
R
DS(on)
MAX
250 mW @
−4.5
V
−20
V
380 mW @
−2.5
V
500 mW @
−1.8
V
700 mW @
−1.5
V
I
D
MAX
−1.5
A
−1.0
A
−0.5
A
−0.2
A
Conduction
Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
ESD
This is a Halide Free Device
This is a Pb−Free Device
High Side Load Switch
PA Switch
Battery Switch
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
Applications
D1
D2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
5s
Power Dissipation
(Note 1)
Steady
State
t
5s
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
tp = 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
T
L
ESD
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
−20
±8.0
−1.4
−1.0
−1.8
0.8
1.3
−1.1
−0.8
0.5
−8.0
-55 to
150
−1.0
260
1000
W
A
°C
A
°C
V
A
W
Units
V
V
A
G1
G2
S1
P−Channel MOSFET
S2
MARKING
DIAGRAM
6
1
UDFN6
CASE 517AT
mCOOLt
1
AC MG
G
AC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Gate-to-Source ESD Rating
(HBM) per JESD22−A114F
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
April, 2009
Rev. 1
1
Publication Order Number:
NTLUD3191PZ/D
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