BAT24-02LS
Silicon Schottky Diode
•
RF Schottky diode for mixer applications
up to 26 GHz
•
Extremely low inductance combined with
ultra low device capacitance
•
Very stable performance for all major parameters
•
Package size: 0.62 x 0.31 x 0.31 mm³ only
•
Pb-free (RoHS compliant) package
BAT24-02LS
1
2
Type
BAT24-02LS
Package
TSSLP-2-1
Configuration
single, leadless
L
S
(nH)
Marking
0.2
±
0.05
S
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
T
S
≤
73 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1
For
Value
4
110
100
150
-55 ... 150
-55 ... 150
Unit
V
mA
mW
°C
V
R
I
F
P
tot
T
j
T
op
T
stg
Symbol
R
thJS
Value
≤
770
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2011-06-15
BAT24-02LS
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 1 V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
0.16
0.25
0.23
0.32
0.32
0.41
V
I
R
-
-
5
µA
V
(BR)
4
-
-
V
Symbol
min.
Values
typ.
max.
Unit
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Differential forward resistance
I
F
= 10 mA / 50 mA
R
F
-
8
10
Ω
C
T
-
0.2
0.23
pF
2
2011-06-15
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