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FDMS86181 N-Channel Shielded Gate PowerTrench
®
MOSFET
May 2016
FDMS86181
N-Channel
Shielded Gate
PowerTrench
®
MOSFET
100 V, 124 A, 4.2 mΩ
Features
Shielded Gate MOSFET Technology
Max r
DS(on)
= 4.2 mΩ at V
GS
= 10 V, I
D
= 44 A
Max r
DS(on)
= 12 mΩ at V
GS
= 6 V, I
D
= 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that
incorporates Shielded Gate technology. This process has been
optimized to minimise on-state resistance and yet maintain
superior switching performance with best in class soft body
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θCA
is determined by the user's board design.
a) 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300
μs,
Duty cycle < 2.0%.
3. E
AS
of 337 mJ is based on starting T
J
= 25
°
C; N-ch: L = 3 mH, I
AS
= 15 A, V
DD
= 100 V, V
GS
=10 V. 100% test at L = 0.1 mH, I
AS
= 49 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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