Advanced Technical Information
FMD 40-06KC
I
D25
= 38 A
V
DSS
= 600 V
R
DSon
= 60 mΩ
Ω
HiPerFET
TM
CoolMOS
™ 1)
Power MOSFETs
-Boost Chopper Topology-
in ISOPLUS i4-PAC
TM
3
4
1
2
1
5
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
±20
38
25
V
V
A
A
Features
• fast CoolMOS
™ 1)
power MOSFET
3
rd
generation
- high blocking voltage
- low on resistance
- low thermals resistance due to reduced
chip thickness
• HiPerDyn
™
FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
• ISOPLUS i4-PAC
™
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• chopper for power factor correction
• supply of high frequency transformer
- switched mode power supplies
- welding converters
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
60
2.1
250
200
250
25
120
20
30
110
10
0.9
tbd
70 mΩ
3.9
25
V
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
V
0.45 K/W
K/W
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
R
thJS
V
GS
= 10 V; I
D
= 20 A
V
DS
= 20 V; I
D
= 2.7 mA
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= ±20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 47 A
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 47 A; R
G
= 1.8
Ω
(reverse conduction) I
F
= 20 A; V
GS
= 0 V
1)
CoolMOS
™
is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
20080526a
© 2008 IXYS All rights reserved
1-2
Advanced Technical Information
FMD 40-06KC
Dimensions in mm (1 mm = 0.0394")
Free Wheeling Diode
(data for series connection)
Symbol
V
RRM
I
F25
I
F90
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 90°C
Maximum Ratings
600
80
45
V
A
A
Symbol
V
F
I
R
I
RM
t
rr
R
thJC
R
thJS
Conditions
I
F
= 20 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 300 V
(per diode)
Characteristic Values
min.
typ. max.
2.6
2.0
0.25
9
40
tbd
2.9
V
V
0.25 mA
mA
A
ns
0.65 K/W
K/W
Component
Symbol
T
VJ
T
stg
V
ISOL
F
C
Symbol
C
P
d
S
,d
A
d
S
,d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting force with clip
Conditions
coupling capacity between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
1.7
5.5
9
Conditions
Maximum Ratings
-55...+150
-55...+125
2500
20...120
°C
°C
V~
N
Characteristic Values
min.
typ. max.
40
pF
mm
mm
g
IXYS reserves the right to change limits, test conditions and dimensions.
20080526a
© 2008 IXYS All rights reserved
2-2
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