d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-0208-Rev. B, 10-Feb-14
Document Number: 62925
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0
2.
5
m
m
S
N-Channel MOSFET
SiA446DJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward
Transconductance
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 3.5 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 3.5 A
T
C
= 25 °C
V
DD
= 75 V, R
L
= 29
,
I
D
2.6 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 75 V, R
L
= 29
,
I
D
2.6 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 75 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 75 V, V
GS
= 10 V, I
D
= 3.5 A
V
DS
= 75 V, V
GS
= 7.5 V, I
D
= 3.5 A
V
DS
= 75 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 150 V, V
GS
= 0 V
V
DS
= 150 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3 A
V
GS
= 7.5 V, I
D
= 2 A
V
GS
= 6 V, I
D
= 1 A
V
DS
= 10 V, I
D
= 3 A
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
-
-
-
-
-
-
-
-
-
0.9
51
100
43
8
12
10
1.2
100
200
-
-
A
V
ns
nC
ns
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
230
47
8
5.3
4.3
1.2
1.8
8.5
2.3
5
13
10
10
10
40
5
10
-
-
-
8
6.5
-
-
-
4.6
10
25
20
20
20
80
10
20
ns
nC
pF
150
-
-
2.5
-
-
-
10
-
-
-
-
-
73
-6
-
-
-
-
-
0.145
0.151
0.165
6
-
-
-
3.5
± 100
1
10
-
0.177
0.185
0.250
-
S
V
mV/°C
V
nA
μA
A
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0208-Rev. B, 10-Feb-14
Document Number: 62925
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA446DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
V
GS
= 10 V thru 6 V
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.6
2.0
Vishay Siliconix
6
V
GS
= 5 V
1.2
4
0.8
T
C
= 25
°C
0.4
T
C
= 125
°C
T
C
= - 55
°C
0.0
2
V
GS
= 4 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.250
350
300
0.200
R
DS(on)
- On-Resistance (Ω)
V
GS
= 6 V
0.150
V
GS
= 10 V
0.100
V
GS
= 7.5 V
C - Capacitance (pF)
250
200
150
Transfer Characteristics
C
iss
C
oss
100
50
0.050
C
rss
0
20
40
60
80
100
0.000
0
2
4
6
8
10
0
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
1.8
Capacitance
V
GS
= 10 V, 7.5 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 3.5 A
V
DS
= 75 V
1.6
1.4
V
GS
= 6 V
1.2
1.0
0.8
0.6
0.4
0
1
2
3
4
5
6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total
Gate
Charge (nC)
T
J
- Junction Temperature (°C)
I
D
= 3 A
V
DS
= 37.5 V
6
V
DS
= 120 V
4
2
0
Gate Charge
S14-0208-Rev. B, 10-Feb-14
On-Resistance vs. Junction Temperature
Document Number: 62925
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA446DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.400
I
D
= 3 A
0.320
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 125
°C
Vishay Siliconix
0.240
1
T
J
= 25
°C
0.160
T
J
= 25
°C
0.080
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
3.6
3.4
3.2
On-Resistance vs. Gate-to-Source Voltage
30
25
20
3.0
2.8
I
D
= 250 μA
2.6
2.4
2.2
- 50
- 25
0
25
50
75
100
125
150
Power (W)
V
GS(th)
(V)
15
10
5
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
Limited by
I
Don
1
Single Pulse Power, Junction-to-Ambient
Limited by I
DM
I
D
- Drain Current (A)
100 μs
1 ms
0.1
10 ms
100 ms
1
s
10
s
DC
BVDSS Limited
0.01
T
A
= 25
°C
0.001
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S14-0208-Rev. B, 10-Feb-14
Document Number: 62925
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA446DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
Vishay Siliconix
8
I
D
- Drain Current (A)
6
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
20
Power Dissipation (W)
15
10
5
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0208-Rev. B, 10-Feb-14
Document Number: 62925
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
EEWORLD
