analog switching products designed for high performance
switching of analog signals. Combining low power, high
speed, low on-resistance and small physical size, the
DG2616, DG2617, DG2618 are ideal for portable and
battery powered applications.
The DG2616, DG2617, DG2618 have built-in charge-pump
circuitry which lowers the minimum supply voltage to + 1.5 V
while maintaining low on-resistance. The Control circuitry
allows the DG2616, DG2617, DG2618 to operate in different
configurations.
Built on Vishay Siliconix's low voltage process, the DG2616,
DG2617, DG2618 has an epitaxial layer that prevents
latch-up. Break-before-make is guaranteed.
The DG2616, DG2617, DG2618 are manufactured in space
saving DFN-10 (3.0 x 3.0 mm). And as a committed partner
to the community and the environment, Vishay Siliconix
manufactures this product with lead (Pb)-free device
terminations and is 100 % RoHS compliant.
FEATURES
•
Low voltage operation (1.5 V to 3.6 V)
• Low on-resistance - R
ON
: 4.2
Ω
typ. at 2.7 V
• Fast switching: t
ON
= 39 ns
t
OFF
= 8 ns
•
DFN-10 package
RoHS
COMPLIANT
BENEFITS
•
Reduced power consumption
• High accuracy
• Reduce board space
• TTL/1.8 V logic compatible
•
High bandwidth
APPLICATIONS
•
Cellular phones
• Audio and video signal routing
• PCMCIA cards
•
Battery operated systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE DG2616
Logic
0
1
NC1, 2
ON
OFF
NO1, 2
OFF
ON
TRUTH TABLE DG2618
SHDN/EN Logic IN Logic NC1, 2
0
0
1
0
1
x
ON
OFF
OFF
NO1, 2
OFF
ON
OFF
Charge Pump
ON
ON
OFF
TRUTH TABLE DG2617
SHDN/EN Logic
0
0
1
1
IN Logic
0
1
0
1
NC1, 2 NO1, 2
ON
OFF
ON
OFF
OFF
ON
OFF
ON
Charge Pump
ON
ON
OFF
OFF
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
DFN-10
Part Number
DG2616DN-T1-E4
DG2617DN-T1-E4
DG2618DN-T1-E4
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
www.vishay.com
1
DG2616, DG2617, DG2618
Vishay Siliconix
DG2616
IN1
IN2
GND
COM1
COM2
1
2
3
4
5
Top
View
10
9
8
7
6
V+
NC1
NC2
NO1
NO2
DG2617/DG2618
IN1
SHDN/EN
GND
COM1
COM2
1
2
3
4
5
Top
View
10
9
8
7
6
V+
NC1
NC2
NO1
NO2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Reference to GND
Current (Any terminal except NO, NC or COM)
Continuous Current (NO, NC, or COM)
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
Storage Temperature (D-Suffix)
V+
IN, COM, NC, NO
a
Limit
- 0.3 to 6.0
- 0.3 to (V+ + 0.3)
30
± 150
± 300
- 65 to 150
Unit
V
mA
°C
Package Solder Reflow Conditions
d
1191
mW
Power Dissipation (Packages)
b
DFN-10
c
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 14.9 mW/°C above 70 °C
d. Manual soldering with iron is not recommended for leadless components. The DFN-10 is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
www.vishay.com
2
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
DG2616, DG2617, DG2618
Vishay Siliconix
SPECIFICATIONS
V+ = 3 V
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
V+ = 1.5 V, V
COM
= 1.5 V, I
NO
, I
NC
= 10 mA
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 10 mA
On-Resistance
R
ON
V+ = 2.7 V, V
COM
= 2.7 V, I
NO
, I
NC
= 10 mA
Full
Room
Full
Room
Full
V+ = 3.6 V, V
COM
= 3.6 V, I
NO
, I
NC
= 10 mA
R
ON
Flatness
d
R
ON
Match
d
On Resistance (Shutdown)
R
ON
Flatness
ΔR
ON
R
SHDN
I
NO(off)
,
Switch Off Leakage Current
I
NC(off)
I
COM(off)
Channel-On Leakage
Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d, f
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
d
t
ON
V+ = 2.7 or 3.6 V, V
NO
or V
NC
= 1.5 V,
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
f = 1 MHz
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 100 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 100 MHz
Room
Room
Room
Room
Room
R
L
= 50
Ω,
C
L
= 35 pF
Room
Full
Room
Full
Full
Room
1
7
- 77
- 32
- 80
- 32
9
7
21
19
pF
dB
pC
9
39
69
76
39
41
ns
V
INH
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 or V+
V+ = 1.5 V
V+ = 2.7 V to 3.6 V
V+ = 1.5 V
V+ = 2.7 V to 3.6 V
Full
Full
-1
3.2
1
Full
1.0
1.4
0.4
0.5
pF
µA
V
I
COM(on)
V+ = 3.6 V, V
NO
, V
NC
= 0.3 V/3.3 V,
V
COM
= 3.3 V/0.3 V
V+ = 2.7 V, V
COM
= 1.5 V, 2.7 V,
I
NO
, I
NC
= 10 mA
V+ = 3.6 V, V
COM
= 1.7 V, I
NO
, I
NC
= 10 mA
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
V+ = 3.6 V, V
NO
, V
NC
= V
COM
= 0.3 V/3.3 V
Room
Full
-2
- 10
-2
- 10
-2
- 10
0.6
0.1
15
20
21
2
10
2
10
2
10
nA
5.5
4.2
4.7
0
5.3
V+
7.0
8.0
7.0
8.0
7.0
8.0
2.0
Ω
V
Symbol
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.4 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Min.
b
Typ.
c
Max.
b
Unit
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
www.vishay.com
3
DG2616, DG2617, DG2618
Vishay Siliconix
SPECIFICATIONS
V+ = 3 V
Test Conditions
Otherwise Unless Specified
Parameter
Power Supply
Power Supply Range
Power Supply Current
V+
I+
V+ = 3.6 V, V
IN
= 0 or V+, SHDN/EN = 0 V
V+ = 3.6 V, V
IN
= 0 or V+, SHDN/EN = V+
Full
1.5
104
0.1
3.6
300
2
V
µA
Symbol
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.4 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Min.
b
Typ.
c
Max.
b
Unit
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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