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AT25XV041B-XMHV-T

Description
SRAM 1024K 2.5V SPI SERIAL SRAM Vbat
Categorystorage   
File Size3MB,53 Pages
ManufacturerAdesto Technologies
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AT25XV041B-XMHV-T Overview

SRAM 1024K 2.5V SPI SERIAL SRAM Vbat

AT25XV041B-XMHV-T Parametric

Parameter NameAttribute value
Product CategoryFlash Memory
ManufacturerAdesto Technologies
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseTSSOP-8
Memory Size4 Mbit
Interface TypeSPI
Speed85 MHz
Supply Voltage - Max4.4 V
Supply Voltage - Min1.65 V
Supply Current - Max5.5 mA, 9.75 mA, 11 mA
Operating Temperature Range- 40 C to + 85 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ArchitectureSector
Data Bus Width8 bit
Maximum Clock Frequency85 MHz
Maximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 C
Organization512 k x 8
Factory Pack Quantity4000
Timing TypeSynchronous
Unit Weight0.006737 oz
AT25XV041B
4-Mbit, 1.65V – 4.4V Range
SPI Serial Flash Memory with Dual-I/O Support
Features
Single 1.65V - 4.4V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual-I/O Operation
85MHz Maximum Operating Frequency
Clock-to-Output (t
V
) of 7.5 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Small (256-Byte) Page Erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Uniform 64-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Dual-Input Byte/Page Program (1 to 256 Bytes)
Sequential Program Mode Capability
Fast Program and Erase Times
1.85ms Typical Page Program (256 Bytes) Time
45ms Typical 4-Kbyte Block Erase Time
360ms Typical 32-Kbyte Block Erase Time
720ms Typical 64-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
200nA Ultra Deep Power Down current (Typical)
5µA Deep Power-Down Current (Typical)
25uA Standby Current (Typical)
3.5mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
8-lead TSSOP Package
8-ball WLCSP (3 x 2 x 3 ball matrix)
DS-25XV041B–091D–2/2017

AT25XV041B-XMHV-T Related Products

AT25XV041B-XMHV-T AT25XV041B-UUVHR-T AT25XV041B-MHV-Y AT25XV041B-UUV-T AT25XV041B-MAHV-T AT25XV041B-SSHV-B AT25XV041B-SSHV-T
Description SRAM 1024K 2.5V SPI SERIAL SRAM Vbat Flash Memory 4M 1.65V-4.4V SPI SerialFlash Dual-I/O Flash Memory SPI S-FLASH Dual-I/O 4Mb, IND TEMP, 1.65V Digital Isolators Iso 5V Full u0026 Half- Duplex RS-485 Xcvr Flash Memory 4M 1.65V-4.4V SPI SerialFlash Dual-I/O Standard LEDs - SMD Blue, 470nm 45mcd, 5mA
Product Category Flash Memory Flash Memory Flash Memory Flash Memory Flash Memory Flash Memory Flash Memory
Manufacturer Adesto Technologies Adesto Technologies Adesto Technologies Adesto Technologies Adesto Technologies Adesto Technologies Adesto Technologies
RoHS Details Details Details Details Details Details Details
Factory Pack Quantity 4000 5000 570 5000 5000 98 4000
Mounting Style SMD/SMT SMD/SMT - - SMD/SMT - SMD/SMT
Package / Case TSSOP-8 WLCSP-8 - - UDFN-8 - SOIC-8
Memory Size 4 Mbit 4 Mbit - - 4 Mbit - 4 Mbit
Interface Type SPI SPI - - SPI - SPI
Speed 85 MHz 85 MHz - - 85 MHz - 85 MHz
Supply Voltage - Max 4.4 V 4.4 V - - 4.4 V - 4.4 V
Supply Voltage - Min 1.65 V 1.65 V - - 1.65 V - 1.65 V
Supply Current - Max 5.5 mA, 9.75 mA, 11 mA 5.5 mA - - 5.5 mA, 9.75 mA, 11 mA - 5.5 mA, 9.75 mA, 11 mA
Packaging Cut Tape - Tray Reel Cut Tape Tube Cut Tape
Maximum Clock Frequency 85 MHz 85 MHz - - 85 MHz - 85 MHz
Minimum Operating Temperature - 40 C - 40 C - - - 40 C - - 40 C
Timing Type Synchronous Synchronous - - Synchronous - Synchronous
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