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ZVN4210ASTOA

Description
MOSFET N-Chnl 100V
Categorysemiconductor    Discrete semiconductor   
File Size68KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZVN4210ASTOA Overview

MOSFET N-Chnl 100V

ZVN4210ASTOA Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerDiodes
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current450 mA
Rds On - Drain-Source Resistance1.8 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingBulk
Fall Time8 ns
Height4.95 mm
Length4.95 mm
Pd - Power Dissipation700 mW
ProductMOSFET Small Signal
Rise Time8 ns
Factory Pack Quantity2000
Transistor Type1 N-Channel
TypeFET
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time4 ns
Unit Weight0.016000 oz
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 1.5Ω
* Spice model available
ZVN4210A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
450
6
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
250
100
40
12
4
8
20
30
2.5
1.5
1.8
100
0.8
2.4
100
10
100
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
A
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=1.5A
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=1.5A
V
GS
=5V,I
D
=500mA
V
DS
=25V,I
D
=1.5A
Forward Transconductance(1)(2 g
fs
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
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