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IRF7103QTRPBF

Description
MOSFET AUTO HEXFET SO-8
CategoryDiscrete semiconductor    The transistor   
File Size259KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF7103QTRPBF Overview

MOSFET AUTO HEXFET SO-8

IRF7103QTRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum drain current (Abs) (ID)3 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.4 W
surface mountYES
PD - 93944D
AUTOMOTIVE MOSFET
Typical Applications
l
Anti-lock Braking Systems (ABS)
l
Electronic Fuel Injection
l
Power Doors, Windows & Seats
IRF7103Q
HEXFET
®
Power MOSFET
V
DSS
50V
R
DS(on)
max (mW)
130@V
GS
= 10V
200@V
GS
= 4.5V
I
D
3.0A
1.5A
Benefits
l
l
l
l
l
l
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Description
Specifically designed for Automotive applications, these
HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
Top View
SO-8
in Tape & Reel.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current

Power Dissipation
ƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt
…
Junction and Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig.16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
ƒ
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
www.irf.com
1
03/25/09

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