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ZVN4306AVSTZ

Description
MOSFET Avalanche
Categorysemiconductor    Discrete semiconductor   
File Size184KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZVN4306AVSTZ Overview

MOSFET Avalanche

ZVN4306AVSTZ Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerDiodes
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current1.1 A
Rds On - Drain-Source Resistance450 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingBulk
Fall Time25 ns
Pd - Power Dissipation850 mW
ProductMOSFET Small Signal
Rise Time25 ns
Factory Pack Quantity4000
Transistor Type1 N-Channel
TypeFET
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time8 ns
Unit Weight0.016000 oz
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEBRUARY 95
FEATURES
* 60 Volt V
DS
* R
DS(on)
= 0.33Ω
* Repetitive Avalanche Rating
APPLICATIONS
* Solenoids / relay drivers for automotive
* Stepper Motor Drivers
* DC-DC convertors
ZVN4306AV
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Practical Continuous Drain Current at
T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Practical Power Dissipation at T
amb
=25°C*
Avalanche Current-Repetitive
Avalanche Energy-Repetitive
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DP
I
DM
V
GS
P
tot
P
totp
I
AR
E
AR
T
j
:T
stg
VALUE
60
1.1
1.3
15
±
20
850
1.13
1
25
-55 to +150
UNIT
V
A
A
A
V
mW
W
A
mJ
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
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