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RB060M-60DDTR

Description
Schottky Diodes u0026 Rectifiers PNP Driver Transistor
Categorysemiconductor    Discrete semiconductor   
File Size802KB,7 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RB060M-60DDTR Overview

Schottky Diodes u0026 Rectifiers PNP Driver Transistor

RB060M-60DDTR Parametric

Parameter NameAttribute value
Product CategorySchottky Diodes & Rectifiers
ManufacturerROHM Semiconductor
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseSOD-123-2
If - Forward Current2 A
Vrrm - Repetitive Reverse Voltage60 V
Vf - Forward Voltage610 mV
Ifsm - Forward Surge Current30 A
ConfigurationSingle
TechnologySi
Ir - Reverse Current50 uA
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity3000
Vr - Reverse Voltage60 V
Unit Weight0.001587 oz
Schottky Barrier Diode
RB060M-60DD
Application
General rectification
Dimensions
(Unit : mm)
1.6±0.1
0.1±0.1
    0.05
Datasheet
AEC-Q101 Qualified
Land
size figure
(Unit : mm)
1.2
0.85
(PMDU)
2) Low I
R
.
3) High reliability.
Construction
Silicon epitaxial
ec
N
ew om
m
D
es en
ig de
ns d
f
0.9±0.1
PMDU
Structure
0.8±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.550.05
3.5±0.05
1.75±0.1
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
1.00.1
Absolute
maximum ratings
(Ta = 25°C)
Parameter
Symbol
V
RM
V
R
Io
Limits
60
60
2
Unit
V
V
Reverse voltage (DC)
ot
Average rectified forward current (*1)
R
Reverse voltage (repetitive)
A
Forward current surge peak (60Hz·1cyc)
Junction temperature
Storage temperature
I
FSM
Tj
30
A
N
150
40
to
150
°C
°C
Tstg
(*1)Mounted on epoxy board. Tc=55°C max.
Electrical
characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Symbol
V
F1
V
F2
I
R
Min.
-
-
-
Typ.
-
-
-
Max.
0.52
0.61
50
Unit
V
V
A
Conditions
I
F
=1.0A
I
F
=2.0A
V
R
=60V
1/4
2015.08 - Rev.C
3.71±0.1
3.710.08
or
0.25±0.05
1.5MAX
2.6±0.1
1) Small power mold type.
1
3.5±0.2
0.12
3.05
Features
Crystal Oscillator Frequency Application Field
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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