RQ3E120GN
Nch 30V 27A Power MOSFET
l
Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
30V
8.8mΩ
±27A
15W
HSMT8
l
Inner circuit
l
Features
1) Low on - resistance
2) High power package (HSMT8)
3) Pb-free lead plating ; RoHS compliant
4) Halogen free
5) 100% Rg and UIS tested
l
Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
l
Application
Type
Embossed
Tape
330
12
3000
TB
E120GN
Unit
V
A
A
A
V
A
mJ
W
W
℃
℃
Switching
l
Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Symbol
T
c
= 25°C
T
a
= 25°C
V
DSS
I
D*1
I
D
I
DP*2
V
GSS
I
AS*3
E
AS*3
P
D*1
P
D*4
T
j
T
stg
Value
30
±27
±12
±48
±20
12
10
15
2.0
150
-55 to +150
1/10
20170406 - Rev.004
RQ3E120GN
l
Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
l
Electrical characteristics (T
a
= 25°C)
Symbol
R
thJC*1
R
thJA*4
Values
Min.
-
-
Typ.
-
-
Max.
8.3
62.5
Unit
℃
/W
℃
/W
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
30
-
-
-
1.2
-
-
-
-
10.0
Typ.
-
28
-
-
-
-3.87
6.7
9.1
2.3
-
Max.
-
-
1
±100
2.5
-
8.8
13.8
-
-
Unit
V
mV/
℃
μA
nA
V
mV/
℃
mΩ
Ω
S
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
R
DS(on)*5
R
G
|Y
fs
|
*5
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 12A
f=1MHz, open drain
V
DS
= 5V, I
D
= 12A
*1 Tc = 25
℃
, Limited only by maximum temperature allowed.
*2 Pw
≦
10μs , Duty cycle
≦
1%
*3 L
⋍
0.1mH, V
DD
= 15V, R
G
= 25Ω, Starting T
j
= 25
℃
Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/10
20170406 - Rev.004
RQ3E120GN
Datasheet
l
Electrical characteristics
(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*5
t
r*5
t
d(off)*5
t
f*5
Conditions
Min.
V
GS
= 0V
V
DS
= 15V
f = 1MHz
V
DD
⋍
15V,V
GS
= 10V
Values
Typ.
590
160
44
9.6
4.5
25.5
3.4
Max.
-
-
-
-
-
Unit
-
-
-
-
-
-
-
pF
I
D
= 6A
R
L
⋍
2.5Ω
R
G
= 10Ω
ns
-
-
l
Gate charge characteristics
(T
a
= 25°C)
Parameter
Symbol
Conditions
Min.
V
GS
= 10V
Values
Typ.
10
4.8
2.3
1.1
Max.
-
-
-
-
Unit
Total gate charge
Gate - Source charge
Gate - Drain charge
Q
g*5
Q
gs
*5
-
-
V
DD
⋍
15V
I
D
= 12A
nC
V
GS
= 4.5V
-
-
Q
gd*5
l
Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
SP*2
V
SD*5
t
rr*5
Q
rr*5
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 1.67A
I
S
= 12A, V
GS
=0V
di/dt = 100A/μs
-
-
-
-
-
Values
Typ.
-
-
-
21.4
11.8
Max.
1.67
48
1.2
-
-
Unit
A
A
V
ns
nC
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
3/10
20170406 - Rev.004
RQ3E120GN
Datasheet
l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
4/10
20170406 - Rev.004
RQ3E120GN
Datasheet
l
Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
5/10
20170406 - Rev.004
京公网安备 11010802033920号
EEWORLD
