TO
-2
20F
BTA208X-600E
3Q Hi-Com Triac
Rev. 07 — 24 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic
package. This "series E" triac balances the requirements of commutation performance
and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low
power drivers including microcontrollers.
1.2 Features and benefits
3Q technology for improved noise
immunity
Direct interfacing with low power logic
circuits and microcontrollers
Good immunity to false turn-on by
dV/dt
High commutation capability with
sensitive gate
High voltage capability
Isolated mounting base package
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
1.3 Applications
Electronic thermostats
General purpose motor controls
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive
peak on-state
current
RMS on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
h
≤
73 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
Conditions
Min
-
-
Typ
-
-
Max Unit
600
65
V
A
I
T(RMS)
-
-
8
A
NXP Semiconductors
BTA208X-600E
3Q Hi-Com Triac
Quick reference data
…continued
Parameter
gate trigger
current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Min
-
-
-
Typ
-
-
-
Max Unit
10
10
10
mA
mA
mA
Table 1.
Symbol
I
GT
Static characteristics
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT186A (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA208X-600E
TO-220F
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
BTA208X-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 07 — 24 January 2011
2 of 14
NXP Semiconductors
BTA208X-600E
3Q Hi-Com Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
h
≤
73 °C; see
Figure 3;
see
Figure 1;
see
Figure 2
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms; sine-wave pulse
I
T
= 0.2 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-40
-
Max
600
8
65
71
21
100
2
5
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
10
I
T(RMS)
(A)
8
73
°C
003aaa969
25
I
T(RMS)
(A)
20
003aaa970
6
15
4
10
2
5
0
−50
0
0
50
100
T
h
(°C)
150
10
−2
10
−1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of heatsink
temperature; maximum values
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
BTA208X-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 07 — 24 January 2011
3 of 14
NXP Semiconductors
BTA208X-600E
3Q Hi-Com Triac
12
P
tot
(W)
10
003aaa967
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
71
T
h(max)
(°C)
80
8
89
6
98
4
107
2
116
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values
003aaa968
80
I
TSM
(A)
60
40
I
T
20
I
TSM
t
T
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA208X-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 07 — 24 January 2011
4 of 14
NXP Semiconductors
BTA208X-600E
3Q Hi-Com Triac
10
3
I
T
I
TSM
(A)
(1)
10
2
003aab121
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
−2
10
−1
1
10
t
p
(ms)
10
2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA208X-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 07 — 24 January 2011
5 of 14
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