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DSC9A01S0L

Description
Bipolar Transistors - BJT SM SIG TRANS FLT LD 1.6x1.6mm
CategoryDiscrete semiconductor    The transistor   
File Size768KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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Bipolar Transistors - BJT SM SIG TRANS FLT LD 1.6x1.6mm

DSC9A01S0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionDSC9A01S0L, Bipolar Transistor, NPN 50 mA 40 V HFE:400 150 MHz LF Amplifier, 3-Pin SSMini3 F3 B
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)600
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
DSC9A01
Silicon NPN epitaxial planar type
For low frequency amplification
DSC5A01 in SSMini3 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: C8
Packaging
DSC9A01×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
opr
T
stg
Rating
50
40
15
50
100
125
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
SSMini3-F3-B
SC-89
SOT-490
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 20 V, I
B
= 0
V
CE
= 10 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 10 V, I
C
= 2 mA
400
0.05
150
Min
50
40
15
0.1
1
2 000
0.20
Typ
Max
Unit
V
V
V
mA
mA
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Code
Rank
h
FE
Marking Symbol
R
R
400 to 800
C8R
S
S
600 to 1 200
C8S
T
T
1 000 to 2 000
C8T
Publication date: February 2014
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