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BSP298H6327XUSA1

Description
USB Interface IC USB to Serial UART Enhanced IC SSOP-28
CategoryDiscrete semiconductor    The transistor   
File Size422KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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USB Interface IC USB to Serial UART Enhanced IC SSOP-28

BSP298H6327XUSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)130 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)0.5 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)2 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BSP298
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
V
GS(th)
= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
V
DS
400 V
Pb-free
Yes
I
D
0.5 A
R
DS(on)
3
Package
Marking
BSP298
Type
BSP298
PG-SOT223
BSP298
Tape and Reel Information
Packaging
H6327
Dry
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 26 °C
I
D
A
0.5
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
2
E
AS
Avalanche energy, single pulse
I
D
= 1.35 A,
V
DD
= 50 V,
R
GS
= 25
L
= 125 mH,
T
j
= 25 °C
mJ
130
V
GS
P
tot
Gate source voltage
Power dissipation
T
A
= 25 °C
±
20
1.8
V
W
ESD Class
JESD22-A114-HBM
Class 1b
Rev. 2.6
1
2012-11-29
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