Polar3
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFT60N50P3
IXFQ60N50P3
IXFH60N50P3
V
DSS
I
D25
R
DS(on)
= 500V
= 60A
110m
TO-268 (IXFT)
G
S
D
(Tab)
TO-3P (IXFQ)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
500
500
30
40
60
150
30
1
35
1040
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
g
Features
G
D
S
D
(Tab)
TO-247 (IXFH)
G
D
S
D
(Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-247 & TO-3P)
TO-268
TO-3P
TO-247
300
260
1.13 / 10
4.0
5.5
6.0
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
500
3.0
5.0
100
V
V
nA
High Power Density
Easy to Mount
Space Savings
Applications
25
A
2
mA
110 m
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100311B(4/15)
IXFT60N50P3
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-247 & TO-3P)
0.25
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
35
60
6250
680
5
1.0
18
16
37
8
96
28
26
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.12
C/W
C/W
e
b2
b4
1
2
3
+
IXFQ60N50P3
IXFH60N50P3
A
A2
S
0P
0P1
E1
TO-3P Outline
E
+
D
D1
+
4
L1
A1
b
c
PINS: 1 - Gate
2, 4 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 30A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
11
1.0
Characteristic Values
Min.
Typ.
Max.
60
240
1.4
250
A
A
V
ns
A
μC
L
L1
C
E1
TO-247 Outline
D
A
A2
A2
E
Q
R
D
+
B
A
0P O 0K M D B M
+
S
D2
+
D1
0P1
1
2
3
ixys option
4
Note
1. Pulse test, t
300s, duty cycle, d
2%.
A1
c
b
b2
b4
e
+
O J M C AM
PINS: 1 - Gate
2, 4 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate
3 - Source
2,4 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFT60N50P3
IXFQ60N50P3
IXFH60N50P3
Fig. 1. Output Characteristics @ T
J
= 25ºC
60
V
GS
= 10V
8V
50
100
120
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
V
GS
= 10V
8V
40
7V
80
7V
I
D
- Amperes
I
D
- Amperes
30
6V
20
60
40
6V
10
5V
0
0
1
2
3
4
5
6
7
20
5V
0
0
5
10
15
20
25
30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
60
V
GS
= 10V
7V
50
6V
3.4
Fig. 4. R
DS(on)
Normalized to I
D
= 30A Value vs.
Junction Temperature
V
GS
= 10V
3.0
2.6
2.2
1.8
1.4
1.0
0.6
I
D
= 30A
I
D
= 60A
40
30
20
5V
10
4V
0
0
2
4
6
8
10
12
14
16
18
R
DS(on)
- Normalized
I
D
- Amperes
0.2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 30A Value vs.
Drain Current
3.4
V
GS
= 10V
3.0
2.6
T
J
= 125ºC
70
Fig. 6. Maximum Drain Current vs.
Case Temperature
60
R
DS(on)
- Normalized
50
I
D
- Amperes
T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
2.2
40
1.8
30
1.4
1.0
20
10
0.6
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved
IXFT60N50P3
IXFQ60N50P3
IXFH60N50P3
Fig. 7. Input Admittance
100
90
80
70
T
J
= 125ºC
25ºC
- 40ºC
100
120
Fig. 8. Transconductance
T
J
= - 40ºC
60
50
40
30
20
10
0
3.5
4.0
4.5
5.0
g
f s
- Siemens
80
25ºC
I
D
- Amperes
60
125ºC
40
20
0
5.5
6.0
6.5
7.0
0
10
20
30
40
50
60
70
80
90
100
110
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
180
160
140
120
10
9
8
7
V
DS
= 250V
I
D
= 30A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
100
100
80
60
40
20
0
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Ciss
1000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
100
Capacitance - PicoFarads
1,000
I
D
- Amperes
Coss
100
100µs
10
10
Crss
1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
f
= 1 MHz
1
0
5
10
15
20
25
30
35
40
0.1
10
100
1,000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT60N50P3
IXFQ60N50P3
IXFH60N50P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
0.2
AAAAA
0.1
Z
(th)JC
- ºC / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_60N50P3(W8)03-10-11
Embedded System
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