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Datasheet> All Categories > semiconductor> Discrete semiconductor> ZTX558STOA
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ZTX558STOA

Description
Bipolar Transistors - BJT PNP High Voltage
Categorysemiconductor    Discrete semiconductor   
File Size75KB，2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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Bipolar Transistors - BJT PNP High Voltage

ZTX558STOA Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 400 V
Collector- Base Voltage VCBO- 400 V
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
Maximum DC Collector Current0.2 A
Gain Bandwidth Product fT50 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current- 0.2 A
DC Current Gain hFE Max100 at 1 mA at 10 V
Height4.01 mm
Length4.77 mm
Minimum Operating Temperature- 55 C
PackagingBulk
Pd - Power Dissipation1 W
Factory Pack Quantity4000
Width2.41 mm
Unit Weight0.016000 oz

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PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 400 Volt V
CEO
* 200mA continuous current
* P
tot
= 1 Watt
ZTX558
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
-400
-400
-5
-200
1
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Collector-Base
Breakdown Voltage
Switching times
SYMBOL MIN.
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
95
1600
3-202
100
100
15
50
5
-400
-400
-5
-100
-100
-100
-0.2
-0.5
-0.9
-0.9
300
MHz
pF
ns
ns
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-6mA
I
C
=-50mA, I
B
=-5mA
IC=-50mA, V
CE
=-10V
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%

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