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BUX85G

Description
Linear Voltage Regulators 1.2-37V Adj Positive 1.5 Amp Output
CategoryDiscrete semiconductor    The transistor   
File Size65KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BUX85G Overview

Linear Voltage Regulators 1.2-37V Adj Positive 1.5 Amp Output

BUX85G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Base Number Matches1
BUX85G
Switch‐mode NPN Silicon
Power Transistors
The BUX85G is designed for high voltage, high speed power
switching applications like converters, inverters, switching regulators,
motor control systems.
Features
www.onsemi.com
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Collector Current
Base Current
Base Current
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
Symbol
V
CEO(sus)
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
I
BM
P
D
T
J
, T
stg
Value
450
1000
5
2
3.0
0.75
1.0
1
50
0.4
−65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Adc
W
W/_C
_C
2.0 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS, 50 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
Reverse Base Current − Peak
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
TO−220
CASE 221A
STYLE 1
1
2
3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.5
62.5
275
Unit
_C/W
_C/W
_C
MARKING DIAGRAM
BUX85G
AY WW
BUX85
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BUX85G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 18
Publication Order Number:
BUX85/D

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