A Product Line of
Diodes Incorporated
ZABG6002
LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
Summary
The ZABG6002 is a programmable low power depletion mode FET bias and mixer controller intended primarily for
satellite Low Noise Blocks (LNBs). Designed to provide system flexibility the ZABG6002 can be programmed to bias
six low noise amplifier (LNA) stages or four LNA and two active mixer stages, allowing the ZABG6002 to be used in
several system designs.
Combining advanced IC process and packaging techniques, the ZABG6002 operates with minimal current over a
wide supply voltage. The small package and reduced component count minimizes the PCB area whilst enhancing
overall LNB reliability.
Features
•
Six stage FET bias controller, two configurable as
mixer stages
•
Operating range of 3.0V to 8.0V
•
Amplifier FET drain voltages set at 2.0V, mixer
drain voltage set at 0.25V
•
Amplifier FET drain current selectable from 0 to
15mA, mixer current from 0 to 7.5mA
•
Switchable FET’s for power management
•
FET drain voltages and currents held stable over
temperature and V
CC
variations
•
FETs protected against overstress during power-
up and power-down.
•
Internal negative supply generator allowing single
supply operation (available for external use)
•
Low quiescent supply current, 1.6mA typical
•
Low external component count
Pin Assignments
QFN2044
D2
G2
D3
G3
RcalM
Vcc
D1
G1
D4
G4
D5
G5
D6
G6
Rcal1
Rcal2
Csub
Cnb1
Cnb2
Csub
Gnd
QSOP20
1
D1
G1
D2
Vcc
D4
G4
D5
G5
D6
G6
Rcal1
Rcal2
Csub
Applications
•
Twin LNB’s
•
Quad LNB’s
•
US LNB’s
•
Microwave links
•
PMR and Cellular telephone systems
G2
D3
G3
RcalM
Gnd
Cnb1
Cnb2
Twin LNB System Diagrams
Vertical
Left
ZABG
6002
Horizontal
ZXHF
5002
Right
ZABG
6002
2x2 MUX
ZLNB
102
ZABG6002
Document number: DS32078 Rev. 1 - 2
1 of 12
www.diodes.com
May 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZABG6002
Device Description
The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used
in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply
and using minimal current.
The ZABG6002 has six FET bias stages that can be user programmed to provide either a two plus four
arrangement of amplifier FET stages or a two plus two arrangement of amplifier FET stages along with two active
mixer FET stages. Programming of the FET bias stage arrangement and the operating currents of each FET group
is achieved by resistors connected to the Rcal1, Rcal2 and RcalM pins, allowing input FETs to be biased for
optimum noise, amplifier FETs for optimum gain and mixer FETs (if used) for optimum conversion gain. Amplifier
FETs can be operated at currents in the range 0 to 15mA and mixer FETs in the range 0.5 to 7.5mA.
Drain voltages of amplifier stages are set at 2.0V and mixer stages at 0.3V. The drain supplies are current limited to
approximately 5% above the operating currents set by their associated Rcal resistors.
As an additional feature the Rcal pins can also be used as logic inputs to disable pairs of FETs as part of a power
management scheme or simply an alternative to LNA switching. Driven to a logic high (>3.0V), the inputs disable
their associated FET bias stages by switching gate feeds to -2.5V and drain feeds open circuit.
Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The
ZABG6002 includes an integrated low noise switched capacitor DC-DC converter generating a regulated output of -
2.5V to allow single supply operation. To aid efficiency and 3.3V systems the ZABG6002 has been design to used
with supply rails of 3.3V to 8V
It is possible to use less than the devices full complement of FET bias controls, unused drain and gate connections
can be left open circuit without affecting operation of the remaining bias circuits.
To protect the external FETs the circuits have been designed to ensure that, under any conditions including power
up/down transients, the gate drive from the bias circuits cannot exceed -3V. Additionally each stage has its own
individual current limiter. Furthermore if the negative rail experiences a fault condition, such as overload or short
circuit, the drain supply to the FETs will shut down avoiding excessive current flow.
The ZABG6002 is available in the 20 pin 4mm x 4mm QFN or QSOP20 package.
Device operating temperature is -40°C to 85°C to suit a wide range of environmental conditions.
ZABG6002
Document number: DS32078 Rev. 1 - 2
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May 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZABG6002
Maximum Ratings
Parameter
Supply Voltage
Supply Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Rating
-0.6 to +10
100
600
-40 to +85
-40 to 150
Unit
V
mA
mW
°C
°C
Electrical Characteristics
Measured at T
AMB
= 25°C, V
CC
= 3.3V (Note 1), R
CAL1
= R
CAL2
= 36K (setting I
D1/2/4/5
R
CALM
= 68K (setting I
D3/6
to 5mA) unless otherwise stated
to 10mA),
Parameter
Operating Voltage Range
Supply Current
Substrate Voltage
Oscillator Frequency
Conditions
I
D1-6
= 0
I
D1-6
= 10mA, no R
CALM
I
CSUB
= 0
I
CSUB
= -200uA
Symbol
V
CC
I
CC
I
CC(L)
V
CSUB
V
CSUB(L)
F
OSC
Min.
3.0
Typ.
1.6
62
-2.65
-2.55
260
-3.0
150
Max.
8.0
4.0
64
-2.0
-2.0
600
Unit
V
mA
mA
V
V
kHz
Gate Characteristics
Gate (G1 to G6, resistor R
CALM
not present)
Current Range
Voltage Low
I
D
= 12mA, I
G
= -10uA
Voltage High
I
D
= 8mA, I
G
= 0
I
D
= 0, I
G
= -10uA,
Voltage Disabled
(*1)
V
RCAL1-2
= 3.0V
Gate (G3 and G6, resistor R
CALM
present)
Current Range
Voltage Low
I
D
= 6mA, I
G
= -10uA
Voltage High
I
D
= 4mA, I
G
= 0
I
D
= 0, I
G
= -10uA,
Voltage Disabled
(*1)
V
RCAL2
= V
RCALM
3.0V
Drain Characteristics
Drain (D1 to D6, resistor R
CAL
M not present)
Current Range
Standard Application
Current Operating
Circuit
Current Disabled
(*1)
V
D
= 0, V
RCAL
= 3.0V
Voltage Operating
I
D
= 10mA
I
G
V
G(L)
V
G(H)
V
G(DIS)
-100
-3.0
0
-3.0
-2.5
0.7
-2.5
+500
-2.0
1.0
-2.0
uA
V
V
V
I
G
V
G(L)
V
G(H)
V
G(DIS)
-100
-3.0
0
-3.0
-2.5
0.7
-2.5
+500
-2.0
1.0
-2.0
uA
V
V
V
I
D
I
D(OP)
I
D(DIS)
V
D(OP)
0
8
1.8
10
2.0
15
12
10
2.2
mA
mA
uA
V
ZABG6002
Document number: DS32078 Rev. 1 - 2
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May 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZABG6002
Electrical Characteristics (Cont.)
Measured at T
AMB
= 25°C, V
CC
= 3.3V (Note 1), R
CAL1
= R
CAL2
= 36K (setting I
D1/2/4/5
10mA), R
CALM
= 68K (setting I
D3/6
to 5mA) unless otherwise stated
to
Parameter
Conditions
Drain Characteristics
Drain (D3 and D6, resistor R
CAL
M present)
Current Range
Standard Application
Current Operating
Circuit
V
D
= 0, V
RCAL
= 3.0V,
Current Disabled
(*1)
R
CALM
not present
Voltage Operating
I
D
= 5mA
R
CAL
(1 and 2)
Disable Threshold
(*1)
Input Current
R
CALM
Disable Threshold
(*1)
R
CALM
Range
Voltage and Temperature dependence (R
CAL
M not present)
delta I
D
vs V
CC
V
CC
= 3.3 to 8.0V
delta I
D
vs T
OP
T
OP
= -40°C to +85°C
delta V
D
vs V
CC
V
CC
= 3.3 to 8.0V
delta V
D
vs T
OP
T
OP
= -40°C to +85°C
Output Noise
Drain Voltage
Gate Voltage
Notes:
Symbol
Min.
Typ.
Max.
Unit
I
DM
I
DM(OP)
I
DM(DIS)
V
DM(OP)
0.5
4
5
7.5
6
10
mA
mA
uA
V
0.25
0.3
0.35
V
RCAL
= 3.0V
V
RCAL(DIS)
I
RCAL(DIS)
1.8
2.7
1.7
3.0
10
V
uA
R
CALM(DIS)
R
CALM
1.5M
39k
3.3M
5.0M
390k
Ω
Ω
dI
D
/dV
CC
dI
D
/dT
OP
dV
D
/dV
CC
dV
D
/dT
OP
1.2
0.05
0.05
50
%/V
%/°C
%/V
ppm/°C
C
GATE-GND
= 10nF,
C
DRAIN-GND
= 10nF
C
GATE-GND
= 10nF,
C
DRAIN-GND
= 10nF
V
D(NOISE)
V
G(NOISE)
0.02
0.005
Vpk-pk
Vpk-pk
1. To disable FET stages 3 and 6, pin R
CAL2
must be set to 3V or above and pin R
CALM
should be open circuit. See applications section for
further information.
2. The characteristics are measured using up to three external reference resistors, R
CAL1
, R
CAL2
and R
CALM
, wired from pins R
CAL1/2/M
to ground.
Resistor R
CAL1
sets the drain current of FETs 1 and 4. If R
CALM
is not present, resistor R
CAL2
sets the drain currents of FETs 2, 3, 5 and 6. If R
CALM
is present, resistor R
CAL2
sets the drain currents of FETs 2 and 5 and R
CALM
sets the drain currents of FETs 3 and 6.
3. The negative bias voltages are generated on-chip using an internal oscillator. Two external capacitors, C
NB
and C
SUB
of value 47nF are required for
this purpose.
4. The QFN2044 exposed pad must either be connected to Csub or left open circuit.
5. Noise voltage measurements are made with FETs and gate and drain capacitors of value 10nF in place. Noise voltages are not measured in production.
6. ESD sensitive, handling precautions are recommended.
ZABG6002
Document number: DS32078 Rev. 1 - 2
4 of 12
www.diodes.com
May 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZABG6002
Typical Characteristics
Measured at T
AMB
= 25°C, V
CC
= 3.3V, R
CAL1
= R
CAL2
= 36K (setting I
D
to 10mA), R
CALM
= 68K (setting
I
D3/6
to 5mA) unless otherwise stated
ZABG6002 Drain Voltage (D1 - D6) vs Temperature
2.3
ZABG6002 Drain Current (D1 - D6) vs Temperature
20
18
2.2
16
14
Drain Current (mA)
-40
-20
0
20
40
60
80
Drain Voltage (V)
2.1
12
10
8
6
4
2
1.9
1.8
2
1.7
0
-40
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
ZABG6002 Drain Voltage (D3 & D6 only) vs Temperature
0.5
10
ZABG6002 Drain Current (D3 & D6 only) vs Temperature
0.4
8
Drain Current (mA)
Drain Voltage (V)
0.3
6
0.2
4
0.1
2
0
-40
-20
0
20
40
60
80
0
-40
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
ZABG6002 Substrate Voltage vs Substrate Current
-2
-2.2
Substrate Voltage (V)
-2.4
-2.6
-2.8
-3
0
50
100
150
200
250
Substrate Current (uA)
ZABG6002
Document number: DS32078 Rev. 1 - 2
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May 2010
© Diodes Incorporated
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