CO
M
PL
IA
TISP1072F3,TISP1082F3
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
*R
oH
S
NT
TISP1xxxF3 Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘1072F3
‘1082F3
V
DRM
V
- 58
- 66
V
(BO)
V
- 72
- 82
D Package (Top View)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
G
G
G
NC - No internal connection
Planar Passivated Junctions
Low Off-State Current <10 A
Rated for International Surge Wave Shapes
Waveshape
2/10
µs
8/20
µs
10/160
µs
10/700
µs
10/560
µs
10/1000
µs
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
FCC Part 68
GR-1089-CORE
I
TSP
A
80
70
60
50
45
35
Device Symbol
T
R
SD1XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
.......................................UL Recognized Component
Description
These dual forward-conducting unidirectional over-voltage
protectors are designed for the overvoltage protection of
ICs used for the SLIC (Subscriber Line Interface Circuit)
function. The IC line driver section is typically powered with
0 V and a negative supply. The TISP1xxxF3 limits voltages
that exceed these supply rails and is offered in two voltage
variants to match typical negative supply voltage values.
High voltages can occur on the line as a result of exposure
to lightning strikes and a.c. power surges. Negative tran-
sients are initially limited by breakdown clamping until the
voltage rises to the breakover level, which causes the
device to crowbar. The high crowbar holding current pre-
vents d.c. latchup as the current subsides. Positive tran-
sients are limited by diode forward conduction. These pro-
tectors are guaranteed to suppress and withstand the listed
international lightning surges on any terminal pair.
How To Order
Device
Package
Carrier
Order As
Tape And Reeled
TISP1xxxF3DR-S
TISP1xxxF3 D, Small-outline
Insert xxx value corresponding to protection voltages of 072 and 082
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Description (continued)
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially
limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar
holding current helps prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These
protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control
and are virtually transparent to the system in normal operation.
Absolute Maximum Ratings, T
A
= 25
°C
(Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, 0
°C
< T
A
< 70
°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0
°C
< T
A
< 70
°C
(see Notes 1 and 3)
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
I
TSM
di
T
/dt
T
J
T
stg
I
PPSM
120
80
50
70
60
55
38
50
50
45
35
4.3
250
-65 to +150
-65 to +150
A
A/µs
°C
°C
A
‘1072F3
‘1082F3
Symbol
V
DRM
Value
-58
-66
Unit
V
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP
®
must be in thermal equilibrium with 0 °C < T
J
<70 °C. The surge may be repeated after the TISP
®
returns to its
initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for R and T Terminal Pair, T
A
= 25
°C
(Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Off-state current
Off-state capacitance
Test Conditions
V
D
=
±V
DRM
, 0
°C
< T
A
< 70
°C
V
D
=
±50
V
f = 100 kHz, V
d
= 100 mV
V
D
= 0
(see Note 4)
0.08
Min
Typ
Max
±10
±10
0.5
Unit
µA
µA
pF
I
DRM
I
D
C
off
NOTE
4: Further details on capacitance are given in the Applications Information section.
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Electrical Characteristics for T and G or R and G Terminals, T
A
= 25
°C
(Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Breakover voltage
Impulse breakover
voltage
Breakover current
Peak forward recovery
voltage
On-state voltage
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Test Conditions
V
D
= V
DRM
, 0
°C
< T
A
< 70
°C
dv/dt = -250 V/ms, R
SOURCE
= 300
Ω
dv/dt
≤
-1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
R
SOURCE
= 50
Ω
dv/dt = -250 V/ms, R
SOURCE
= 300
Ω
dv/dt
≤
+1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
R
SOURCE
= 50
Ω
I
T
= -5 A,t
W
= 100
µs
I
T
= +5 A,t
W
= 100
µs
I
T
= -5 A,d i/dt = +30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= -50 V
f = 1 MHz, V
d
= 0.1 Vr .m.s.,V
D
= 0
f = 1 MHz,
V
d
= 0.1 Vr .m.s.,V
D
= -5 V
‘1072F3
‘1082F3
‘1072F3
‘1082F3
-0.1
‘1072F3
‘1082F3
3.3
3.3
-3
+3
-0.15
-5
-10
240
240
104
104
48
48
-78
-92
-0.6
Min
Typ
Max
-10
-72
-82
Unit
µA
V
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
FRM
V
T
V
F
I
H
dv/dt
I
D
V
A
V
V
V
A
kV/µs
µA
C
off
Off-state capacitance
f = 1 MHz, V
d
= 0.1 Vr .m.s.,V
D
= -50 V
(see Note 4)
NOTE
5: Further details on capacitance are given in the Applications Information section.
‘1072F3
‘1082F3
‘1072F3
‘1082F3
‘1072F3
‘1082F3
150
130
65
55
30
25
pF
Thermal Characteristics
Parameter
Test Conditions
P
tot
= 0.8 W, T
A
= 25
°C
5 cm
2
, FR4 PCB
Min
Typ
Max
Unit
R
θJA
Junction to free air thermal resistance
160
°C/W
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Parameter Measurement Information
+i
I
TSP
Quadrant I
Forward
Conduction
Characteristic
I
TSM
I
F
V
F
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAC
V
DRM
I
DRM
V
D
I
D
+v
V
(BO)
Figure 1. Voltage-current Characteristic for Terminals R and G or T and G
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAA
V
(BO)
I
(BO)
I
DRM
V
(BR)
I
(BR)
V
DRM
V
(BR)M
+v
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
(BO)
Figure 2. Voltage-current Characteristic for Terminals R and T
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
100
V
D
= -50 V
10
TC1LAF
TC1LAL
I
(BR)
= 1 mA
Negative Breakdown Voltages - V
80.0
V
(BO)
'1082F3
1
70.0
V
(BR)M
V
(BR)
'1072F3
V
(BO)
0.1
0.01
60.0
V
(BR)
V
(BR)M
0.001
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
T
J
- Junction Temperature -
°C
Figure 3.
Figure 4.
100
OFF-STATE CURRENT
vs
ON-STATE VOLTAGE
TC1LAC
FORWARD CURRENT
vs
FORWARD VOLTAGE
100
TC1LAE
25 °C
I
F
- Forward Current - A
150 °C
40 °C
10
10
25 °C
150 °C
1
1
2
3
4
5
6
7 8 9 10
V
T
- On-State Voltage - V
-40 °C
1
1
2
3
4
5
6
7 8 9 10
V
F
- Forward Voltage - V
Figure 5.
Figure 6.
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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