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BSP129-H6327

Description
Memory Cards MicroSD Card 4GB COM CLASS 4 w SD ADP
Categorysemiconductor    Discrete semiconductor   
File Size447KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSP129-H6327 Overview

Memory Cards MicroSD Card 4GB COM CLASS 4 w SD ADP

BSP129-H6327 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage240 V
Id - Continuous Drain Current350 mA
Rds On - Drain-Source Resistance4.2 Ohms
Vgs th - Gate-Source Threshold Voltage- 2.1 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge5.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeDepletion
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time35 ns
Forward Transconductance - Min180 mS
Height1.6 mm
Length6.5 mm
Pd - Power Dissipation1.8 W
Rise Time4.1 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
Typical Turn-On Delay Time4.4 ns
Width3.5 mm
Unit Weight0.003951 oz
BSP129
SIPMOS Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
®
Product Summary
V
DS
R
DS(on),max
I
DSS,min
240
6
0.05
V
W
A
PG-SOT223
Type
Type
BSP129
BSP129
BSP129
BSP129
Package
Package
PG-SOT223
PG-SOT223
PG-SOT223
PG-SOT223
Tape and Reel
Tape and Reel
H6327: 1000 pcs/reel
L6327: 1000 pcs/reel
H6906: 1000 pcs/reel
sorted in
V
GS(th)
bands
   1)
L6906: 1000 pcs/reel soed
Marking
Packaging
Marking
Packaging
BSP129
Non dry
BSP129
Non dry
BSP129
Non dry
BSP129
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.36 A,
V
DS
=192 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.35
0.28
1.4
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD class (JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
1A(>250V,<500V)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
1.8
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 1.42
page 1
2012-11-29

BSP129-H6327 Related Products

BSP129-H6327 BSP129-L6906
Description Memory Cards MicroSD Card 4GB COM CLASS 4 w SD ADP Precision Amplifiers
Product Category MOSFET MOSFET
Manufacturer Infineon Infineon
RoHS Details Details
Technology Si Si
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-223-4 SOT-223-4
Number of Channels 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 240 V 240 V
Id - Continuous Drain Current 350 mA 350 mA
Rds On - Drain-Source Resistance 4.2 Ohms 6.5 Ohms
Vgs - Gate-Source Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Configuration Single Single Dual Drain
Channel Mode Depletion Depletion
Fall Time 35 ns 4.1 ns
Height 1.6 mm 1.6 mm
Length 6.5 mm 6.5 mm
Pd - Power Dissipation 1.8 W 1.8 W
Rise Time 4.1 ns 4.1 ns
Factory Pack Quantity 1000 1000
Transistor Type 1 N-Channel 1 N-Channel
Typical Turn-Off Delay Time 22 ns 22 ns
Typical Turn-On Delay Time 4.4 ns 4.4 ns
Width 3.5 mm 3.5 mm
Unit Weight 0.003951 oz 0.003951 oz
Packaging Cut Tape Cut Tape
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