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SSM3K59CTBL3F

Description
MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V
Categorysemiconductor    Discrete semiconductor   
File Size224KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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SSM3K59CTBL3F Overview

MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V

SSM3K59CTBL3F Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerToshiba Semiconductor
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseCST3B-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current2 A
Rds On - Drain-Source Resistance250 mOhms
Vgs th - Gate-Source Threshold Voltage1.2 V
Vgs - Gate-Source Voltage1.8 V
Qg - Gate Charge1.1 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Height0.48 mm
Length1.2 mm
Pd - Power Dissipation1000 mW
Factory Pack Quantity10000
Typical Turn-Off Delay Time8 ns
Typical Turn-On Delay Time13 ns
Width0.8 mm
SSM3K59CTB
MOSFETs
Silicon N-Channel MOS
SSM3K59CTB
1. Applications
DC-DC Converters
2. Features
(1)
(2)
1.8-V gate drive voltage.
Low drain-source on-resistance
: R
DS(ON)
= 250 mΩ (typ.) (@V
GS
= 1.8 V, I
D
= 0.2 A)
R
DS(ON)
= 210 mΩ (typ.) (@V
GS
= 2.5 V, I
D
= 0.5 A)
R
DS(ON)
= 185 mΩ (typ.) (@V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(ON)
= 175 mΩ (typ.) (@V
GS
= 8.0 V, I
D
= 1.0 A)
3. Packaging and Pin Assignment
1: Gate
2: Source
3: Drain
CST3B
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Channel temperature
Storage temperature
(Note 1)
(Note 1)
(Note 2)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
40
±12
2.0
4.0
1000
150
-55 to 150
mW
A
Unit
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150
.
Note 2: Device mounted on an FR4 board. (25.4 mm
×
25.4 mm
×
1.6 mm ,Cu pad: 645 mm
2
)
Note:
Start of commercial production
©2015 Toshiba Corporation
1
2015-01
2015-11-26
Rev.2.0
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