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ZTX453STOB

Description
Bipolar Transistors - BJT NPN Medium Power
Categorysemiconductor    Discrete semiconductor   
File Size66KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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Bipolar Transistors - BJT NPN Medium Power

ZTX453STOB Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max100 V
Collector- Base Voltage VCBO120 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current1 A
Gain Bandwidth Product fT150 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current1 A
Height4.01 mm
Length4.77 mm
Minimum Operating Temperature- 55 C
PackagingBulk
Pd - Power Dissipation1 W
Factory Pack Quantity4000
Width2.41 mm
Unit Weight0.016000 oz
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – MARCH 1994
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX452
ZTX453
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX452
100
80
5
2
1
1
E-Line
TO92 Compatible
ZTX453
120
100
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
40
10
150
15
3-177
100
80
5
0.1
0.1
0.7
1.3
150
40
10
150
15
ZTX452
MIN.
120
100
5
0.1
0.1
0.7
1.3
200
ZTX453
MAX.
V
V
V
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=80V
V
CB
=100V
V
EB
=4V
I
C
=150mA, I
B
=15mA*
I
C
=150mA, I
B
=15mA*
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
MAX. MIN.
V
V
MHz
pF
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz

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