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BLF6G22LS-130112

Description
RF MOSFET Transistors LDMOS TNS
Categorysemiconductor    Discrete semiconductor   
File Size897KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF6G22LS-130112 Overview

RF MOSFET Transistors LDMOS TNS

BLF6G22LS-130112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current34 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance135 mOhms
TechnologySi
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502B-3
PackagingTube
Channel ModeEnhancement
ConfigurationSingle
Height4.72 mm
Length20.7 mm
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Width9.91 mm
BLF6G22LS-130
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
30
G
p
(dB)
17
D
(%)
28.5
IMD3
(dBc)
37
[1]
ACPR
(dBc)
40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 1100 mA:
Average output power = 30 W
Power gain = 17 dB (typ)
Efficiency = 28.5 %
IMD3 =
37
dBc
ACPR =
40
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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