TRENCHSTOP™ Series
IKA15N60T
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Features:
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in V
CE(sat)
Low EMI
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Air Condition
Inverters
G
E
PG-TO220-3 (FullPak)
Type
IKA15N60T
V
CE
600V
I
C
15A
V
CE(sat),Tj=25°C
1.5V
T
j,max
175C
Marking Code
K15T60
Package
PG-TO220-3 (FullPAK)
Maximum Ratings
Parameter
Collector-emitter voltage,
T
j
≥ 25C
DC collector current, limited by
T
jmax
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175C,
t
p
= 1µs
Diode forward current, limited by
T
jmax
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
Value
600
18.3
10.6
45
45
17.2
10.8
45
20
5
35.7
-40...+175
-55...+150
260
Unit
V
A
V
s
W
V
GE
= 15V,
V
CC
400V,
T
j
150C
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
Solder temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Isolation Voltage
C
V
isol
2500
V
r m s
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits:
<1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.6 25.07.2016
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 0 .2m A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 15 A
T
j
=2 5
C
T
j
=1 7 5 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 1 5 A
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 21 0µ A ,
V
C E
=
V
G E
V
C E
= 60 0 V
,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
IKA15N60T
q
Max. Value
Unit
Symbol
Conditions
R
thJC
R
thJCD
R
thJA
4.2
4.8
80
K/W
Symbol
Conditions
Value
min.
600
-
-
-
-
4.1
Typ.
-
1.5
1.9
1.65
1.6
4.9
max.
-
2.05
-
2.05
-
5.7
Unit
V
µA
-
-
-
-
-
-
-
8.7
-
40
1000
100
-
nA
S
Ω
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 15 A
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=1 5 A
V
G E
= 15 V
-
-
-
-
-
860
55
24
87
7
137.5
-
-
-
-
-
-
pF
nC
nH
A
V
G E
= 15 V ,t
S C
5
s
V
C C
= 4 0 0 V,
T
j
150C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.6 25.07.2016
IFAG IPC TD VLS
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 4 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=8 2 5 A/
s
-
-
-
-
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T
j
=25
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
r
G
=15
,
L
=154nH,
C
=39pF
IKA15N60T
q
Value
Unit
Symbol
Conditions
min.
-
-
-
-
-
-
-
Typ.
17
11
188
50
0.22
0.35
0.57
34
0.24
10.4
718
max.
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
µC
A
A/s
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5 C
V
R
= 4 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=8 2 5 A/
s
-
-
-
-
140
1.0
14.7
495
-
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T
j
=175
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
r
G
=15
,
L
=154nH,
C
=39pF
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
Typ.
17
15
212
79
0.34
0.47
0.81
max.
-
-
-
-
-
-
-
Unit
ns
mJ
IFAG IPC TD VLS
3
Rev. 2.6 25.07.2016
TRENCHSTOP™ Series
IKA15N60T
q
t
p
=2µs
T
C
=80°C
30A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10A
10µs
50µs
1A
1ms
10ms
DC
0.1A
20A
T
C
=110°C
I
c
10A
I
c
0A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
175C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 15)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
175C;
V
GE
=0/15V)
35W
30W
25W
20W
15W
10W
5W
0W
25°C
P
tot
,
POWER DISSIPATION
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
150°C
15A
10A
5A
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
175C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
175C)
IFAG IPC TD VLS
4
Rev. 2.6 25.07.2016
TRENCHSTOP™ Series
40A
40A
35A
V
G E
=20V
15V
25A
20A
15A
10A
5A
0A
0V
1V
2V
3V
13V
11V
9V
7V
35A
V
G E
=20V
15V
13V
11V
20A
15A
10A
5A
0A
0V
1V
9V
7V
IKA15N60T
q
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
30A
30A
25A
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
35A
30A
25A
20A
15A
10A
T
J
=175°C
5A
0A
0V
2V
4V
6V
8V
25°C
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
2.5V
I
C
=30A
I
C
,
COLLECTOR CURRENT
2.0V
1.5V
I
C
=15A
I
C
=7.5A
1.0V
0.5V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2.6 25.07.2016
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