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SI1903DL-T1-E3

Description
MOSFET 20V 0.44A
CategoryDiscrete semiconductor    The transistor   
File Size108KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI1903DL-T1-E3 Overview

MOSFET 20V 0.44A

SI1903DL-T1-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.41 A
Maximum drain current (ID)0.41 A
Maximum drain-source on-resistance0.995 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)888 pF
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Si1903DL
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
0.995 at V
GS
= - 4.5 V
- 20
1.190 at V
GS
= - 3.6 V
1.8 at V
GS
= - 2.5 V
I
D
(A)
± 0.44
± 0.40
± 0.32
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
QA
G
1
2
5
G
2
X
YY
Lot Traceability
and Date Code
Part # Code
D
2
3
4
S
2
Top
View
Ordering Information:
Si1903DL-T1-E3 (Lead (Pb)-free)
Si1903DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5s
Steady State
- 20
± 12
± 0.44
± 0.31
± 1.0
- 0.25
0.30
0.16
- 55 to 150
- 0.23
0.27
0.14
± 0.41
± 0.30
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
360
400
300
Maximum
415
460
350
Unit
°C/W
Document Number: 71081
S10-0110-Rev. E, 18-Jan-10
www.vishay.com
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