DSSK 80-0045B
Power Schottky Rectifier
with common cathode
I
FAV
=
V
RRM
=
V
F
=
2x40 A
45 V
0.45 V
V
RSM
V
45
V
RRM
V
45
Type
A
C
A
TO-247 AD
D2
A
C
A
C (TAB)
DSSK 80-0045B
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Symbol
I
R
V
F
Conditions
T
C
= 125°C; rectangular, d = 0.5
T
C
= 125°C; rectangular, d = 0.5; per device
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
I
AS
= 20 A; L = 180 µH; T
VJ
= 25°C; non repetitive
V
A
=1.5 • V
RRM
typ.; f=10 kHz; repetitive
Maximum Ratings
70
40
80
600
57
2
1000
-55...+150
150
-55...+150
A
A
A
A
mJ
A
V/µs
°C
°C
°C
W
Nm
g
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low I
RM
-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
T
C
= 25°C
mounting torque
typical
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 100°C V
R
= V
RRM
I
F
= 40 A;
I
F
= 40 A;
I
F
= 80 A;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
0.25
155
0.8...1.2
6
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Characteristic Values
typ.
max.
30
250
0.45
0.51
0.69
0.8
mA
mA
V
V
V
K/W
K/W
Dimensions see pages D2 - 87-88
R
thJC
R
thCH
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
232
© 2002 IXYS All rights reserved
1-2
DSSK 80-0045B
100
A
I
F
10000
mA
10000
pF
I
R
1000
T
VJ
=150 C
125 C
C
T
100
10
T
VJ
=
150 C
125 C
25 C
100 C
1000
10
75 C
50 C
25 C
1
1
0.0
0.1
0.2
0.4
V
F
0.6 V
0
10
20
30
40 V 50
V
R
100
0
10
20
T
VJ
= 25 C
30
V
R
40 V
Fig. 1 Maximum forward voltage
drop characteristics
80
A
70
I
F(AV)
60
50
40
d=0.5
DC
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
45
W
40
35
P
(AV)
30
25
20
d=
DC
0.5
0.33
0.25
0.17
0.08
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
10000
A
I
FSM
1000
30
20
10
0
0
40
80
T
C
120 C 160
15
10
5
0
0
10
20
30
40 50
I
F(AV)
60 A
100
10
100
1000
t
P
s 10000
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
1
Fig. 5 Forward power loss
characteristics
K/W
Z
thJC
D=0.5
0.33
0.25
0.17
0.08
Single Pulse
0.1
0.05
0.001
DSSK 80-0045B
0.01
0.1
1s
10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
232
2-2
© 2002 IXYS All rights reserved
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