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STQ2NK60ZR-AP

Description
Power Switch ICs - Power Distribution Smart High Side PROFET Quad
CategoryDiscrete semiconductor    The transistor   
File Size427KB,16 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STQ2NK60ZR-AP Overview

Power Switch ICs - Power Distribution Smart High Side PROFET Quad

STQ2NK60ZR-AP Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)90 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)0.4 A
Maximum drain current (ID)0.4 A
Maximum drain-source on-resistance8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3 W
Maximum pulsed drain current (IDM)1.6 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STF2NK60Z - STQ2NK60ZR-AP
STP2NK60Z - STD2NK60Z-1
N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE
STF2NK60Z
STQ2NK60ZR-AP
STP2NK60Z
STD2NK60Z-1
s
s
s
s
s
s
Figure 1: Package
I
D
1.4
0.4
1.4
1.4
A
A
A
A
Pw
20
3W
45 W
45 W
8
8
8
8
V
DSS
600 V
600 V
600 V
600 V
R
DS(on)
<
<
<
<
3
TYPICAL R
DS
(on) = 7.2
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
TO-92 (Ammopack)
TO-220
1
2
3
2
1
3
1
2
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
IPAK
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
s
LOW POWER BATTERY CHARGERS
s
SWITH MODE LOW POWER
SUPPLIES(SMPS)
s
LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STQ2NK60ZR-AP
STP2NK60Z
STD2NK60Z-1
STF2NK60Z
Marking
Q2NK60ZR
P2NK60Z
D2NK60Z
F2NK60Z
Package
TO-92
TO-220
IPAK
TO-220FP
Packaging
AMMOPAK
TUBE
TUBE
TUBE
Rev. 5
September 2005
1/16

STQ2NK60ZR-AP Related Products

STQ2NK60ZR-AP STP2NK60Z
Description Power Switch ICs - Power Distribution Smart High Side PROFET Quad MOSFET N-Ch 600 Volt 1.4Amp 511-STP22NF03L
Is it Rohs certified? conform to conform to
Parts packaging code TO-92 TO-220AB
package instruction CYLINDRICAL, O-PBCY-T3 TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 90 mJ 90 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (Abs) (ID) 0.4 A 1.4 A
Maximum drain current (ID) 0.4 A 1.5 A
Maximum drain-source on-resistance 8 Ω 8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-92 TO-220AB
JESD-30 code O-PBCY-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR
Package form CYLINDRICAL FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 3 W 45 W
Maximum pulsed drain current (IDM) 1.6 A 6 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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