SEMICONDUCTOR
TECHNICAL DATA
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
KTX321U
EPITAXIAL PLANAR PNP TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
B
B1
1
6
5
4
D
C
Reduce a quantity of parts and manufacturing process.
2
3
DIM
A
A1
B
B1
C
D
G
H
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
A1
H
MARKING
6
5
A
C
Type Name
4
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
G
T
T
Q2
Q1
BR
2
3
1
2
3
EMITTER
BASE
DRAIN
SOURCE
GATE
COLLECTOR
1
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
US6
Q
1
MAXIMUM RATING (Ta=25
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP *
P
C *
T
j
T
stg
RATING
-15
-12
-6
-500
-1
150
150
-55 150
UNIT
V
V
V
mA
A
mW
CHARACTERISTIC
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Q
2
MAXIMUM RATING (Ta=25
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
)
SYMBOL
V
DS
V
GSS
I
D
P
C **
T
ch
T
stg
RATING
30
20
100
150
150
-55 150
UNIT
V
V
mA
mW
CHARACTERISTIC
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
2003. 11. 20
Revision No : 0
1/6
KTX321U
Q
1
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(sat)
f
T
C
ob
)
TEST CONDITION
V
CB
=-15V, I
E
=0
V
EB
=-6V, I
C
=0
I
C
=-10 A
I
C
=-1mA
I
E
=-10 A
V
CE
=-2V, I
C
=-10mA
I
C
=-200mA, I
B
=-10mA
V
CE
=-2V, I
C
=-10mA, f
T
=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
-15
-12
-6
270
-
-
-
TYP.
-
-
-
-
-
-
-100
260
6.5
MAX.
-100
-100
-
-
-
680
-250
-
-
UNIT
nA
nA
V
V
V
-
mV
MHz
pF
Q
2
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
I
GSS
V
(BR)DSS
I
DSS
V
th
|Y
fs
|
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
)
TEST CONDITION
V
GS
= 20V, V
DS
=0V
I
D
=100 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=3V, I
D
=0.1mA
V
DS
=3V, I
D
=10mA
I
D
=10mA, V
GS
=2.5V
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DD
=5V, I
D
=10mA, V
GS
=0 5V
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
160
MAX.
1
-
1
1.5
-
7
-
-
-
-
-
pF
pF
pF
nS
nS
UNIT
A
V
A
V
mS
SYMBOL
2003. 11. 20
Revision No : 0
2/6
KTX321U
Q
1
(PNP TRANSISTOR)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
1K
DC CURRENT GAIN h
FE
500
300
Ta=125 C
Ta=25 C
Ta=-40 C
V
CE(sat)
- I
C
-1K
-500
-300
-100
-50
-30
-10
-5
-3
-1
-1K
I
C
/I
B
=20
100
50
30
V
CE
=-2V
C
125
Ta=
25 C
C
Ta=
=-40
Ta
10
-1
-3
-10
-30
-100
-300
-1K
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
-1K
-500
-300
-100
-50
-30
-10
-5
-3
-1
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
V
BE(sat)
- I
C
-10K
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(mV)
-5K
-3K
I
C
/I
B
=20
Ta=25 C
-1K
-500
-300
Ta=-40 C
Ta=25 C
C
Ta=125
-100
-1
-3
-10
-30
-100
-300
-1K
-1
-3
-10
-30
-100
-300
-1K
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
I
C
- V
BE
TRANSITION FREQUENCY f
T
(MHz)
-1K
COLLECTOR CURRENT I
C
(mA)
-500
-300
-100
Ta=2
5 C
Ta=-
40 C
V
CE
=-2V
f
T
- I
C
1K
500
300
V
CE
=-2V
Ta=25 C
Ta=1
-50
-30
-10
-5
-3
-1
0
25 C
100
50
30
-0.5
-1.0
-1.5
10
-1
-3
-10
-30
-100
-300
-1K
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(mA)
2003. 11. 20
Revision No : 0
3/6
KTX321U
C
ob
- V
CB
, C
ib
- V
EB
COLLECTOR INPUT CAPACITANCE C
ib
(PF)
COLLECTOR OUTPUT CAPACITANCE C
ob
(PF)
500
300
100
50
30
10
5
3
1
-0.1
C
ob
COLLECTOR POWER DISSIPATION P
C
(mW)
1K
I
E
=0A
f=1MHz
Ta=25 C
Pc - Ta
200
150
C
ib
100
50
0
-0.3
-1
-3
-10
-30
-100
0
25
50
75
100
125
150
COLLECTOR-BASE VOLTAGE V
CB
(V)
EMITTER-BASE VOLTAGE V
EB
(V)
AMBIENT TEMPERATURE Ta ( C)
2003. 11. 20
Revision No : 0
4/6
KTX321U
Q
2
(N CHANNEL MOS FIELD EFFECT TRANSISTOR)
I
D
- V
DS
100
DRAIN CURRENT I
D
(mA)
80
60
40
20
0
2.5V
2.2V
2.0V
1.8V
1.6V
1.4V
V
GS
=1.2V
I
D
- V
DS
(LOW VOLTAGE REGION)
1.0
DRAIN CURRENT I
D
(mA)
0.8
0.6
0.4
0.2
0
2.5V
1.2V
1.15V
COMMON
SOURCE
Ta=25 C
COMMON SOURCE
Ta=25 C
1.1V
1.05V
1.0V
V
GS
=0.9V
0
2
4
6
8
10
12
0
0.1
0.2
0.3
0.4
0.5
0.6
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
DR
- V
DS
DRAIN REVERSE CURRENT I
DR
(mA)
100
V
GS
=0
Ta=25 C
D
G
S
I
DR
I
D
- V
GS
100
DRAIN CURRENT I
D
(mA)
30
10
3
1
0.3
0.1
0.03
0.01
0
1
2
3
4
5
100
C
30
10
3
1
0.3
0.1
0.03
0.01
0
-0.4
-0.8
COMMON SOURCE
COMMON SOURCE
V
DS
=3V
Ta=
Ta=25 C
Ta=-25 C
-1.2
-1.6
DRAIN-SOURCE VOTAGE V
DS
(V)
GATE-SOURCE VOTAGE V
GS
(V)
Y
fs
FORWARD TRANSFER ADMITTANCE
Y
(mS)
300
COMMON SOURCE
V
DS
=3V
Ta=25 C
- I
D
100
CAPACITANCE C (pF)
50
30
C
oss
C
iss
C - V
DS
COMMON SOURCE
V
GS
=0
f=1MHz
Ta=25 C
100
50
30
fs
10
5
3
10
5
1
3
5
10
30
50
100
C
rss
1
0.1
0.3 0.5
1
3
5
10
DRAIN CURRENT I
D
(mA)
DRAIN-SOURCE VOLTAGE V
DS
(V)
20
2003. 11. 20
Revision No : 0
5/6
京公网安备 11010802033920号
EEWORLD
