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BSZ036NE2LSATMA1

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 6.3V .1uF X7R 0603 5%
Categorysemiconductor    Discrete semiconductor   
File Size574KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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Multilayer Ceramic Capacitors MLCC - SMD/SMT 6.3V .1uF X7R 0603 5%

BSZ036NE2LSATMA1 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage25 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance3 mOhms
Vgs th - Gate-Source Threshold Voltage1.2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge21 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time2.2 ns
Forward Transconductance - Min44 S
Height1.1 mm
Length3.3 mm
Pd - Power Dissipation37 W
Rise Time2.8 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time3.3 ns
Width3.3 mm
For
BSZ036NE2LS
TM
OptiMOS
Features
Power-MOSFET
Product Summary
25
V
GS
=10 V
V
GS
=4.5 V
I
D
3.6
5.1
40
A
V
mW
• Optimized for high performance Buck converter (Server,VGA)
V
DS
• Very Low FOM
QOSS
for High Frequency SMPS
• Low FOM
SW
for High Frequency SMPS
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
R
DS(on),max
PG-TSDSON-8
(fused leads)
Type
BSZ036NE2LS
Package
PG-TSDSON-8 (fused leads)
Marking
036NE2L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=60 K/W
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
1)
2)
Value
40
40
40
40
Unit
A
16
160
20
40
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=20 A,
R
GS
=25
W
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev. 2.2
page 1
2013-04-25
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