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BSC0924NDIATMA1

Description
MOSFET LV POWER MOS
CategoryDiscrete semiconductor    The transistor   
File Size652KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC0924NDIATMA1 Overview

MOSFET LV POWER MOS

BSC0924NDIATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-N6
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time18 weeks
Shell connectionDRAIN SOURCE
ConfigurationSERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1.3 A
Maximum drain-source on-resistance0.007 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSC0924NDI
Dual N-Channel OptiMOS™ MOSFET
Product Summary
Features
• Dual N-channel OptiMOS™ MOSFET
• Integrated monolithic Schottky-like diode
• Optimized for high performance Buck converter
Logic level (4.5V rated)
I
D
• 100% avalanche tested
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-22
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
Q1
30
5
7
40
Q2
30
3.7
5.2
40
A
V
mW
VPhase
Type
BSC0924NDI
Package
PG-TISON-8
Marking
0924NDI
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
2)
Parameter
Continuous drain current
Symbol Conditions
Q1
I
D
T
C
=70 °C, V
GS
=10V
T
A
=25 °C, V
GS
=4.5V
3)
T
A
=70 °C, V
GS
=4.5V
T
A
=25 °C, V
GS
=10V
4)
Pulsed drain current
5)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
I
D,pulse
E
AS
V
GS
P
tot
T
A
=25 °C
2)
T
A
=25 °C, minimum
footprint
3)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
3)
Value
Q2
40
32
25
13
160
10
±20
2.5
1.0
-55 ... 150
55/150/56
2.5
1.0
40
17
14
10
160
9
3)
Unit
A
T
C
=70 °C
Q1:
I
D
=20 A,
Q2:
I
D
=20 A,
R
GS
=25
W
mJ
V
W
T
j
,
T
stg
°C
J-STD20 and JESD22
One transistor active
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is
vertical in still air.
4)
5)
Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
See figure 3 for more detailed information.
Rev.2.0
page 1
2013-07-30
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