DMP3010LK3
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(on) max
8mΩ @ V
GS
= -10V
10.2mΩ @ V
GS
= -4.5V
I
D
T
A
= +25°C
-17A
-14.5A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.33 grams (approximate)
Applications
DC-DC Converters
Power management functions
Backlighting
TO252
D
D
G
D
G
Top View
S
Top View
Pin-Out
Equivalent Circuit
S
Ordering Information
(Note 4 & 5)
Part Number
DMP3010LK3-13
DMP3010LK3Q-13
Notes:
Compliance
Standard
Automotive
Case
TO252
TO252
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Logo
P3010L
YYWW
Part no.
.
Xth week: 01 ~ 53
Year:
“11＂
= 2011
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
1 of 7
www.diodes.com
July 2013
© Diodes Incorporated
DMP3010LK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
-30
±20
-17.0
-13.0
-27.0
-21.0
-14.5
-11.5
-23.0
-18.0
-100
5.5
47
113
Units
V
V
A
A
A
A
A
A
A
mJ
Continuous Drain Current (Note 7) V
GS
= -4.5V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Value
1.7
72
29
3.4
37
15
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
-1.1
Typ
-1.6
6.5
7.2
30
-0.65
6234
1500
774
1.28
59.2
16.1
15.7
11.4
9.4
260.7
99.3
Max
-1
100
-2.1
8
10.2
-1.0
Unit
V
µ
A
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -10A
V
DS
= -15V, I
D
= -10A
V
GS
= 0V, I
S
= -1A
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -10A
V
DS
= -15V, V
GEN
= -10V,
R
G
= 6Ω, I
D
= -1A
pF
µ
nC
ns
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .UIS in production with L = 0.1mH, T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
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July 2013
© Diodes Incorporated
DMP3010LK3
30
V
GS
= -10V
30
25
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
25
-I
D
, DRAIN CURRENT (A)
V
DS
= -5V
V
GS
= -5.0V
20
V
GS
= -3.5V
V
GS
= -3.0V
20
15
V
GS
= -2.5V
15
10
10
T
A
= 150°C
5
0
V
GS
= -2.0V
5
0
0
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0.5
1
1.5
2
2.5
3
3.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
4
0.5
1
1.5
2
2.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.020
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
0
10
15
20
25
-I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
5
30
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
GS
= -4.5V
0.016
0.012
0.008
V
GS
= -4.5V
0.004
V
GS
= -10V
0
0
5
10
15
20
25
-I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
1.6
0.020
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
0.016
1.2
0.012
1.0
V
GS
= -10V
I
D
= -20A
0.008
V
GS
= -4.5V
I
D
= -10A
0.8
V
GS
= -4.5V
I
D
= -10A
0.004
V
GS
= -10V
I
D
= -20A
0.6
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
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DMP3010LK3
2.5
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
30
2.0
-I
S
, SOURCE CURRENT (A)
25
20
1.5
I
D
= -1mA
1.0
I
D
= -250µA
15
T
A
= 25°C
10
0.5
5
0
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
-50 -25
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10,000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
100,000
-I
DSS
, LEAKAGE CURRENT (nA)
10,000
T
A
= 150°C
C
oss
1,000
T
A
= 125°C
1,000
C
rss
100
T
A
= 85°C
10
T
A
= 25°C
f = 1MHz
100
0
4
8
12
16
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Total Capacitance
20
1
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
30
Figure 10 Typical Leakage Current vs. Drain-Source Voltage
10
100
P
(pk)
, PEAK TRANSIENT POWER (W)
90
80
70
60
50
40
30
20
10
Single Pulse
R
JA
= 72°C/W
R
JA
(t) = r(t) * R
JA
T
J
- T
A
= P * R
JA
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= -15V
I
D
= -10A
6
4
2
0
40
60
80
100
120 140
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Source Voltage vs. Total Gate Charge
0
20
0
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 12 Single Pulse Maximum Power Dissipation
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
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© Diodes Incorporated
DMP3010LK3
80
Starting Temperature (T
J
) = 25°C
700
600
E
AS
, AVALANCHE ENERGY (mJ)
500
400
I
AS
E
AS
70
I
AS
, AVALANCHE CURRENT (A)
60
50
40
30
300
200
100
0
0.1 0.2
20
10
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
INDUCTOR (mH)
Figure 13 Single-Pulse Avalanche Tested
0.3
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.50
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 72°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIMES (sec)
Figure 14 Transient Thermal Resistance
1,000
10,000
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
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July 2013
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