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BC54PA115

Description
MOSFET 20V Trench N-Channel
Categorysemiconductor    Discrete semiconductor   
File Size1MB,23 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC54PA115 Overview

MOSFET 20V Trench N-Channel

BC54PA115 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerNXP
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-1061-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Collector- Base Voltage VCBO45 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
Maximum DC Collector Current2 A
Gain Bandwidth Product fT180 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current1 A
DC Collector/Base Gain hfe Min63
DC Current Gain hFE Max250
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Pd - Power Dissipation1.65 W
Factory Pack Quantity3000
BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
Rev. 8 — 21 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP54
BCX54
BC54PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP51
BCX51
BC51PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
45
1
2
250
160
250
Unit
V
A
A

BC54PA115 Related Products

BC54PA115 BCP54115 BCX54-16115
Description MOSFET 20V Trench N-Channel CAN Interface IC 12 -24 V 70 mA CAN Transceiver Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10uF 6.3volts X5R 20%
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer NXP NXP NXP
RoHS Details Details Details
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-1061-3 SOT-223-3 SOT-89-3
Transistor Polarity NPN NPN NPN
Configuration Single Single Single
Collector- Emitter Voltage VCEO Max 45 V 45 V 45 V
Collector- Base Voltage VCBO 45 V 45 V 45 V
Emitter- Base Voltage VEBO 5 V 5 V 5 V
Maximum DC Collector Current 2 A 1.5 A 1 A
Gain Bandwidth Product fT 180 MHz 180 MHz 180 MHz
Maximum Operating Temperature + 150 C + 150 C + 150 C
DC Current Gain hFE Max 250 63 63 at 150 mA at 2 V
Minimum Operating Temperature - 55 C - 65 C - 65 C
Pd - Power Dissipation 1.65 W 0.96 W 1250 mW
Collector-Emitter Saturation Voltage 0.5 V - 500 mV
Continuous Collector Current 1 A 1 A -
DC Collector/Base Gain hfe Min 63 63 -
Packaging MouseReel Cut Tape MouseReel
Factory Pack Quantity 3000 - 1000
Height - 1.7 mm (Max) 1.6 mm
Length - 6.7 mm (Max) 4.6 mm
Width - 3.7 mm (Max) 2.6 mm
Unit Weight - 0.035274 oz 0.004603 oz
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