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BDW83C

Description
Darlington Transistors NPN Power Darlington
CategoryDiscrete semiconductor    The transistor   
File Size123KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BDW83C Overview

Darlington Transistors NPN Power Darlington

BDW83C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-218
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys DescriptionDarlington Transistors NPN Power Darlington
Maximum collector current (IC)15 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment130 W
Maximum power dissipation(Abs)3.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max4 V
BDW83C
NPN power Darlington transistor
Datasheet — production data
Features
High current capability
Fast switching speed
High DC current gain
Applications
Linear and switching industrial equipment
Description
The BDW83C is an epitaxial-base NPN power
monolithic Darlington transistor mounted in
TO-247 plastic package. It is intended for use in
power linear and switching applications.
Figure 1.
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Internal schematic diagram
Table 1.
Device summary
Marking
BDW83C
Package
TO-247
Packaging
Tube
Order code
BDW83C
May 2012
This is information on a product in full production.
Doc ID 4265 Rev 6
1/9
www.st.com
9
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