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BSC032N04LSATMA1

Description
Non-Isolated DC/DC Converters 3.3Vout 300mA 2.5x2.0mm micro DCDC
CategoryDiscrete semiconductor    The transistor   
File Size1MB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

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Non-Isolated DC/DC Converters 3.3Vout 300mA 2.5x2.0mm micro DCDC

BSC032N04LSATMA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F5
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
Avalanche Energy Efficiency Rating (Eas)30 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)21 A
Maximum drain-source on-resistance0.0044 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)392 A
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSC032N04LS
MOSFET
OptiMOS
TM
Power-MOSFET,40V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..10V)
Value
40
3.2
98
22
25
Unit
V
mΩ
A
nC
nC
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC032N04LS
Package
PG-TDSON-8
Marking
032N04LS
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-06-09
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