®
BYW81G-200
BYW81P-200 / BYW81PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
K
FEATURES
s
s
s
s
s
s
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION :
Insulating voltage = 2500 V
RMS
Capacitance = 7 pF
A
NC
2
D PAK
(Plastic)
BYW81G-200
DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in TO-220AC and D²PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
ABSOLUTE MAXIMUM RATINGS
Symbol
I
F(RMS)
I
F(AV)
Parameter
RMS forward current
Average forward current
δ
= 0.5
BYW81P
BYW81PI/G
I
FSM
Surge non repetitive forward current
Tstg
Tj
Storage and junction temperature range
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
b
O
so
te
le
K
ro
P
uc
d
s)
t(
TO-220AC
(Plastic)
BYW81P-200
P
te
le
A
od
r
s)
t(
uc
A
K
TO-220AC Ins.
(Plastic)
BYW81PI-200
Value
35
15
15
200
- 40 to + 150
- 40 to + 150
Unit
A
A
Tc=115°C
Tc=90°C
tp=10ms
sinusoidal
A
°C
°C
Value
200
Unit
V
July 2002 - Ed: 3E
1/6
BYW81P-200 / BYW81PI-200 / BYW81G-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
BYW81P
BYW81PI / G
Value
2.0
3.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
I
R
*
T
j
= 25°C
T
j
= 100°C
V
F **
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
I
F
= 12 A
I
F
= 25 A
I
F
= 25 A
Test Conditions
V
R
= V
RRM
Min.
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
µs,
duty cycle < 2 %
b
O
so
te
le
ro
P
Typ.
uc
d
s)
t(
Unit
µA
mA
V
P
te
le
od
r
s)
t(
uc
20
1.5
0.85
1.05
1.15
Max.
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
I
F
= 0.5A
I
R
= 1A
Min.
Typ.
Max.
25
Unit
ns
T
j
= 25°C
Irr = 0.25A
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/µs
40
tfr
T
j
= 25°C
I
F
= 1A
V
FR
= 1.1 x V
F
I
F
= 1A
tr = 10 ns
15
ns
V
FP
T
j
= 25°C
tr = 10 ns
2
V
2/6
BYW81P-200 / BYW81PI-200 / BYW81G-200
Fig. 1:
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.05
=0.1
=0.2
=0.5
=1
Fig. 2:
Peak current versus form factor.
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
350
300
250
200
T
IM(A)
T
I
M
=tp/T
tp
150
100
P=10W
P=20W
P=30W
I F(av)(A)
2.5
5
7.5
10
12.5
50
=tp/T
tp
0.0
0
15
17.5
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3:
Forward voltage drop versus forward
current (maximum values).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=125
o
C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
K
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
0.5
=0.2
=0.1
b
O
0.2
Zth(j-c) (tp.
K =
Rth(j-c)
=0.5
so
te
le
)
ro
P
uc
d
s)
t(
P
te
le
od
r
s)
t(
uc
T
Single pulse
IFM(A)
0.1
1
10
100 200
0.1
tp(s)
1.0E-02
1.0E-01
=tp/T
tp
1.0E-03
1.0E+00
Fig. 5:
Non repetitive surge peak forward current
versus overload duration.
(BYW81P)
160
150
140
130
120
110
100
90
80
70
60
50
40
IM
30
20
10
0
0.001
Fig. 6:
Non repetitive surge peak forward current
versus overload duration.
(BYW81PI / BYW81G)
120
110
100
90
80
70
60
50
40
30
IM
20
10
0
0.001
IM(A)
IM(A)
Tc=25
o
C
Tc=75
o
C
Tc=115
o
C
Tc=25
o
C
Tc=60
o
C
Tc=90
o
C
t
=0.5
t(s)
0.01
0.1
1
t
=0.5
t(s)
0.01
0.1
1
3/6
BYW81P-200 / BYW81PI-200 / BYW81G-200
Fig. 7:
Average current
temperature.
(duty cycle : 0.5) (BYW81P)
versus
ambient
Fig. 8:
Average current versus ambient
temperature.
(duty cycle : 0.5) (BYW81PI / BYW81G)
I F(av)(A)
16
15
Rth(j-a)=Rth(j-c)
14
13
12
11
10
Rth(j-a)=15
o
C/W
9
8
7
=0.5
T
6
5
4
3
2
=tp/T
tp
Tamb(
o
C)
1
0
0
20
40
60
80
100 120 140
I F(av)(A)
16
15
14
Rth(j-a)=Rth(j-c)
13
12
11
10
Rth(j-a)=15
o
C/W
9
8
7
=0.5
T
6
5
4
3
2
=tp/T
tp
1
Tamb(
o
C)
0
0
20
40
60
80
100 120
140
160
Fig. 9:
Junction capacitance versus reverse
voltage applied (Typical values).
C(pF)
120
F=1Mhz Tj=25
o
C
Fig. 10:
Recovery charges versus dI
F
/dt.
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
110
105
100
95
90
85
115
b
O
60
50
40
30
20
10
QRR(nC)
IF=IF(av)
90%CONFIDENCE
so
te
le
ro
P
uc
d
s)
t(
160
P
te
le
od
r
s)
t(
uc
Tj=100
O
C
Tj=25
O
C
VR(V)
10
dIF/dt(A/us)
10
20
40
60 80
80
1
30
50
70
0
1
Fig. 11:
Peak reverse current versus dI
F
/dt.
Fig. 12:
Dynamic parameters versus junction
temperature.
3.0
2.5
2.0
IRM(A)
QRR;IRM[Tj]/QRR;IRM[Tj=125
o
C]
90%CONFIDENCE
1.50
1.25
1.00
0.75
IF=IF(av)
Tj=100
O
C
IRM
1.5
1.0
0.5
0.0
1
10
Tj=25
O
C
QRR
0.50
0.25
0.00
0
25
Tj(
o
C)
dIF/dt(A/us)
20
40
60 80
50
75
100
125
150
4/6
BYW81P-200 / BYW81PI-200 / BYW81G-200
PACKAGE MECHANICAL DATA
TO-220AC (JEDEC outline)
H2
C
L5
ØI
L6
L2
D
L7
A
DIMENSIONS
REF.
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
Millimeters
Min.
Max.
4.40
4.60
1.23
1.32
2.40
2.72
0.49
0.70
0.61
0.88
1.14
1.70
4.95
5.15
10.00
10.40
16.40 typ.
13.00
14.00
2.65
2.95
15.25
15.75
6.20
6.60
3.50
3.93
2.6 typ.
3.75
3.85
Inches
Min.
Max.
0.173
0.181
0.048
0.051
0.094
0.107
0.019
0.027
0.024
0.034
0.044
0.066
0.194
0.202
0.393
0.409
0.645 typ.
0.511
0.551
0.104
0.116
0.600
0.620
0.244
0.259
0.137
0.154
0.102 typ.
0.147
0.151
L9
F1
L4
F
G
s
M
E
s
s
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
s
s
Marking
: Type number
Cooling method : C
Weight : 1.9 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
b
O
so
te
le
ro
P
uc
d
s)
t(
P
te
le
Min.
14.23
12.70
10.20
0.64
1.15
4.48
0.35
2.10
4.58
5.85
3.55
2.54
1.45
od
r
s)
t(
uc
PACKAGE MECHANICAL DATA
TO-220AC (isolated)
B
C
DIMENSIONS
Millimeters
Max.
15.87
4.50
14.70
10.45
0.96
1.39
4.82
0.65
2.70
5.58
6.85
4.00
3.00
1.75
Inches
Min.
0.560
0.500
0.402
0.025
0.045
0.176
0.020
0.083
0.180
0.230
0.140
0.100
0.057
Max.
0.625
0.177
0.579
0.411
0.038
0.055
0.190
0.026
0.106
0.220
0.270
0.157
0.118
0.069
I
b2
REF.
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
L
l2
L
F
A
a1
l2
a2
b1
c1
e
s
c2
s
s
s
s
Marking
: Type number
Cooling method : C
Weight : 2.2 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/6
京公网安备 11010802033920号
EEWORLD
