n-Channel Power MOSFET
OptiMOS™
BSB280N15NZ3 G
Data Sheet
2.5, 2011-09-16
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
1
Description
OptiMOS™150V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™
150V the best choice for the demanding requirements of voltage regulator
solutions in Solar, Drives, Datacom and Telecom applications. Super fast
switching Control FETs together with low EMI Sync FETs provide solutions that
are easy to design in. OptiMOS™ products are available in high performance
packages to tackle your most challenging applications giving full flexibility in
optimizing space- efficiency and cost.
Features
•
•
•
•
•
•
•
•
•
•
Optimized for high switching frequency DC/DC converter
Very low on-resistance R
DS(on)
Qualified according to JEDEC
1)
for target applications
Excellent gate charge x R
DS(on)
product (FOM)
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double sided cooling
Compatible with DirectFET® package MZ footprint and outline
Low parasitic inductance
Low profile (<0.7 mm)
Applications
•
•
•
•
Synchronous rectification
Primary side switches
Power managment for high performance computing
High power density point of load converters
Key Performance Parameters
Value
150
28
30
38
15
Unit
V
mΩ
A
nC
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Table 1
Parameter
V
DS
R
DS(on),max
I
D
Q
OSS
Q
g
.
typ
Type
BSB280N15NZ3 G
Package
MG-WDSON-2
Marking
0215
1) J-STD20 and JESD22
Final Data Sheet
1
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
2
Maximum ratings
at
T
j
= 25 °C, unless otherwise specified.
Table 2
Parameter
Continuous drain current
Maximum ratings
Symbol
Min.
I
D
-
-
Values
Typ.
Max.
30
19
9
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
-
-
-20
-
-40
-
-
-
-
-
120
120
20
57
2.8
150
°C
55/150/56
mJ
V
W
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
1)
A
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=45 K/W)
1)
T
C
=25 °C
I
D
=30 A,R
GS
=25
Ω
Unit
Note / Test Condition
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical in still air.
2) See figure 3 for more detailed information
3
Table 3
Parameter
Thermal characteristics
Thermal characteristics
Symbol
Min.
-
-
-
1
-
Values
Typ.
Max.
2.2
-
45
K/W
Unit
Note /
Test Condition
top
bottom
6 cm
2
cooling area
1)
Thermal resistance, junction - case
R
thJC
Device on PCB
R
thJA
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.
PCB is vertical in still air.
Final Data Sheet
2
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at
T
j=25 °C, unless otherwise specified.
Table 4
Parameter
Static characteristics
Symbol
Min.
Drain-source breakdown voltage
V
(BR)DSS
Gate threshold voltage
Zero gate voltage drain current
150
2
-
-
Gate-source leakage current
-
3
0.1
10
10
24
24
Gate resistance
Transconductance
0.6
37
Values
Typ.
Max.
-
4
10
100
100
28
32
-
Ω
S
|V
DS
|>2|I
D|RDS(on)max
,
I
D
=30 A
nA
mΩ
µA
V
Unit
Note / Test Condition
V
GS
=0 V,
I
D
=1.0 mA
V
DS
=
V
GS
,
I
D
=60 µA
V
DS
=120 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=120 V,
V
GS
=0 V,
T
j
=125 °C
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=30A
V
GS
=8 V,
I
D
=15A
V
GS(th)
I
DSS
I
GSS
-
-
-
18
Drain-source on-state resistance
R
DS(on)
R
G
g
fs
Table 5
Parameter
Dynamic characteristics
Symbol
Min.
Values
Typ.
1200
180
4
9
6
16
3
Max.
1600
240
-
-
-
-
-
ns
pF
-
-
-
-
-
-
-
Unit
Note /
Test Condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
V
GS
=0 V,
V
DS
=75V,
f
=1 MHz
V
DD
=75V,
V
GS
=10 V,
I
D
=30 A,
R
G
= 1.6
Ω
t
d(on)
t
r
t
d(off)
t
f
Final Data Sheet
3
2.5, 2011-09-16
OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
Electrical characteristics
Table 6
Parameter
Gate charge characteristics
1)
Symbol
Min.
Values
Typ.
7
2.6
7
15
5.6
41
Max.
-
-
-
21
-
55
V
nC
-
-
-
-
-
Unit
Note /
Test Condition
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q
gs
Q
gd
Q
sw
V
DD
=75 V,
I
D
=30 A,
V
GS
=0 to 10 V
Q
g
V
plateau
Q
oss
V
DD
=75 V,
V
GS
=0 V
1) See figure 16 for gate charge parameter definition
Table 7
Parameter
Reverse diode characteristics
Symbol
Min.
I
s
I
S,pulse
Values
Typ.
Max.
47
120
-
-
0.9
100
314
1.2
-
V
nC
A
Unit
Note /
Test Condition
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
T
C
=25 °C
V
GS
=0 V,
I
F
=47 A,
T
j
=25 °C
V
R
=75 V,
I
F
=30A,
d
i
F
/d
t
=100 A/µs
V
SD
t
rr
Q
rr
Final Data Sheet
4
2.5, 2011-09-16
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