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BZT52B6V2

Description
Operational Amplifiers - Op Amps 36V, Low-Power Op Amp
CategoryDiscrete semiconductor    diode   
File Size203KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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Operational Amplifiers - Op Amps 36V, Low-Power Op Amp

BZT52B6V2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-F2
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Nominal reference voltage6.2 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Maximum voltage tolerance2%
Working test current5 mA
BZT52B2V4 - BZT52B75
Taiwan Semiconductor
Small Signal Product
500mW, 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface mount device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- V
Z
Tolerance Selection of ±2%
- Matte tin (Sn) lead finish with Nickel (Ni) under plate
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 8.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward voltage
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
(Note 1)
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
T
STG
VALUE
1
500
350
150
- 65 to +150
UNIT
V
mW
°C/W
°C
°C
Notes: 1. Valid provided that electrodes are kept at ambient temperature
ZENER I vs. V CHARACTERISTICS
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1405026
Version: F15
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