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BAW79DH6327XTSA1

Description
Diodes - General Purpose, Power, Switching AF DIODES
CategoryDiscrete semiconductor    diode   
File Size65KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Diodes - General Purpose, Power, Switching AF DIODES

BAW79DH6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time6 weeks
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSSO-F3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation1 W
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time1 µs
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
BAW78.../BAW79...
Silicon Switching Diodes
Switching applications
High breakdown voltage
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAW78D
BAW79D

!

!
Type
BAW78D
BAW79D
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Peak forward current
Package
SOT89
SOT89
Configuration
single
common cathode
Symbol
V
R
V
RM
I
F
I
FM
I
FM
I
FS
I
FSM
P
tot
1
1
T
j
T
stg
150
-65 ... 150
Value
400
400
1
1
1
10
-
Marking
GD
GH
Unit
V
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Surge forward current,
t
= 1 µs
Non-repetitive peak surge forward current
Total power dissipation
BAW78D,
T
S
125°C
BAW79D,
T
S
115°C
Junction temperature
Storage temperature
1
Pb-containing
W
°C
package may be available upon special request
1
2007-04-20

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