BAW56LT1G,
SBAW56LT1G,
BAW56LT3G,
SBAW56LT3G
Dual Switching Diode
Common Anode
Features
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•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Non−Repetitive Peak Forward Current
t = 1
ms
(Note 3)
Symbol
V
R
I
F
I
FM(surge)
I
FSM
Value
70
200
500
4
Unit
V
mA
mA
A
ANODE
3
SOT−23 (TO−236)
CASE 318
STYLE 12
CATHODE
1
2
CATHODE
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Device
BAW56LT1G
SBAW56LT1G
BAW56LT3G
SBAW56LT3G
A1
M
G
1
A1 M
G
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Square Wave; T
j
= 25°C.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 8
1
Publication Order Number:
BAW56LT1/D
BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage
(I
(BR)
= 100
mA)
Reverse Voltage Leakage Current
(V
R
= 25 V, T
J
= 150°C)
(V
R
= 70 V)
(V
R
= 70 V, T
J
= 150°C)
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA) (Figure 1) R
L
= 100
W
Symbol
V
(BR)
I
R
Min
70
−
−
−
−
−
−
−
−
−
Max
−
30
2.5
50
2.0
715
855
1000
1250
6.0
Unit
V
mA
C
D
V
F
pF
mV
t
rr
ns
820
W
+10 V
2.0 k
100
mH
0.1
mF
D.U.T.
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G
Curves Applicable to Each Cathode
100
IF, FORWARD CURRENT (mA)
IR , REVERSE CURRENT (μA)
10
T
A
= 150°C
T
A
= 85°C
10
T
A
= - 40°C
1.0
T
A
= 125°C
T
A
= 85°C
0.1
T
A
= 55°C
0.01
T
A
= 25°C
1.0
T
A
= 25°C
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
CD , DIODE CAPACITANCE (pF)
1.5
1.25
1.0
0.75
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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