GS61004B
100V enhancement mode GaN transistor
Preliminary Datasheet
Features
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100V enhancement mode power switch
Bottom-side cooled configuration
R
DS(on)
= 15 mΩ
I
DS(max)
= 45 A
Ultra-low FOM Island Technology® die
Low inductance GaN
PX
® package
Easy gate drive requirements (0 V to 6 V)
Transient tolerant gate drive (-20 V / +10 V)
Very high switching frequency (f > 100 MHz)
Fast and controllable fall and rise times
Reverse current capability
Zero reverse recovery loss
Small 4.6 x 4.4 mm
2
PCB footprint
RoHS 6 compliant
Package Outline
Circuit Symbol
Applications
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High efficiency power conversion
High density power conversion
Enterprise and Networking Power
ZVS Phase Shifted Full Bridge
Half Bridge topologies
Synchronous Buck or Boost
Uninterruptable Power Supplies
Industrial Motor Drives
Solar Power
Fast Battery Charging
Class D Audio amplifiers
Smart Home
Description
The GS61004B is an enhancement mode GaN-on-
Silicon power transistor. The properties of GaN allow
for high current, high voltage breakdown, high
switching frequency and high temperature
operation. GaN Systems implements patented
Island Technology®
cell layout for high-current die
performance & yield.
GaN
PX
®
packaging enables
low inductance & low thermal resistance in a small
package. The GS61004B is a bottom-cooled
transistor that offer very low junction-to-case
thermal resistance for demanding high power
applications. These features combine to provide
very high efficiency power switching.
Rev. 171101
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
© 2009-2017 GaN Systems Inc.
Submit datasheet feedback
1
GS61004B
100V enhancement mode GaN transistor
Preliminary Datasheet
Absolute Maximum Ratings
(T
case
= 25 °C except as noted)
Parameter
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Transient Drain to Source Voltage (note 1)
Gate-to-Source Voltage
Gate-to-Source Voltage - transient (note 1)
Continuous Drain Current (T
case
=25 °C) (note 2)
Continuous Drain Current (T
case
=100 °C) (note 2)
(1) For 1
µs
(2) Limited by saturation
Symbol
T
J
T
S
V
DS
V
DS(transient)
V
GS
V
GS(transient)
I
DS
I
DS
Value
-55 to +150
-55 to +150
100
130
-10 to +7
-20 to +10
45
35
Unit
°C
°C
V
V
V
V
A
A
Thermal Characteristics
(Typical values unless otherwise noted)
Parameter
Thermal Resistance (junction-to-case)
Thermal Resistance (junction-to-top)
Thermal Resistance (junction-to-ambient) (note 3)
Maximum Soldering Temperature (MSL3 rated)
Symbol
R
ΘJC
R
θJT
R
ΘJA
T
SOLD
Value
1.1
22
28
260
Units
°C /W
°C /W
°C /W
°C
(3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The
recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm
pitch (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm
2
each. The PCB is
mounted in horizontal position without air stream cooling.
Ordering Information
Ordering code
GS61004B-TR
GS61004B-MR
Package type
GaN
PX
® bottom cooled
GaN
PX
® bottom cooled
Packing
method
Tape-and-Reel
Mini-Reel
Qty
3000
250
Reel
Diameter
13” (330mm)
7” (180mm)
Reel
Width
16mm
16mm
Rev. 171101
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
© 2009-2017 GaN Systems Inc.
Submit datasheet feedback
2
GS61004B
100V enhancement mode GaN transistor
Preliminary Datasheet
Electrical Characteristics
(Typical values at T
J
= 25 °C, V
GS
= 6 V unless otherwise noted)
Parameters
Drain-to-Source Blocking Voltage
Drain-to-Source On Resistance
Drain-to-Source On Resistance
Gate-to-Source Threshold
Gate-to-Source Current
Gate Plateau Voltage
Drain-to-Source Leakage Current
Drain-to-Source Leakage Current
Internal Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related (Note 4)
Effective Output Capacitance
Time Related (Note 5)
Total Gate Charge
Gate-to-Source Charge
Gate threshold charge
Gate switching charge
Gate-to-Drain Charge
Output Charge
Reverse Recovery Charge
Sym.
BV
DS
R
DS(on)
R
DS(on)
V
GS(th)
I
GS
V
plat
I
DSS
I
DSS
R
G
C
ISS
C
OSS
C
RSS
C
O(ER)
C
O(TR)
Q
G
Q
GS
Q
G(th)
Q
G(sw)
Q
GD
Q
OSS
Q
RR
1.1
Min.
Typ.
100
15
39
1.3
100
3
0.3
50
0.92
295
140
6.2
276
217
6.2
2.4
1.0
2.0
0.9
11.5
0
20
Max.
Units
V
mΩ
mΩ
V
µA
V
µA
µA
Ω
pF
pF
pF
pF
pF
nC
nC
nC
nC
nC
nC
nC
V
GS
= 0 V, V
DS
= 50 V
V
GS
= 0 to 6 V
V
DS
= 50 V
I
DS
= 45 A
Conditions
V
GS
= 0V, I
DSS
= 50
µA
V
GS
= 6V, T
J
= 25 °C
I
DS
= 13.5 A
V
GS
= 6 V, T
J
= 150 °C
I
DS
= 13.5 A
V
DS
= V
GS
, I
D
= 7 mA
V
GS
= 6 V, V
DS
= 0 V
V
DS
= 80 V, I
D
= 45 A
V
DS
=100 V, V
GS
= 0 V
T
J =
25°C
V
DS
= 100 V, V
GS
= 0 V
T
J
= 150 °C
f = 1 MHz, open drain
V
DS
= 50 V
V
GS
= 0 V
f = 1 MHz
V
GS
= 0 V
V
DS
= 0 to 50 V
(4)
C
O(ER)
is the fixed capacitance that would give the same stored energy as C
OSS
while V
DS
is rising from 0 V to the stated
V
DS
(5)
C
O(TR)
is the fixed capacitance that would give the same charging time as C
OSS
while V
DS
is rising from 0 V to the stated
V
DS
Rev. 171101
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
© 2009-2017 GaN Systems Inc.
Submit datasheet feedback
3
GS61004B
100V enhancement mode GaN transistor
Preliminary Datasheet
Electrical Performance Graphs
GS61004B I
DS
vs. V
DS
Characteristic
GS61004B I
DS
vs. V
DS
Characteristic
Figure 1: Typical I
DS
vs. V
DS
@ T
J
= 25 ⁰C
Figure 2: Typical I
DS
vs. V
DS
@ T
J
= 150 ⁰C
R
DS(on)
vs. I
DS
Characteristic
R
DS(on)
vs. I
DS
Characteristic
Figure 3: R
DS(on)
vs. I
DS
at T
J
= 25 ⁰C
Figure 4: R
DS(on)
vs. I
DS
at T
J
= 150 ⁰C
Rev. 171101
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
© 2009-2017 GaN Systems Inc.
Submit datasheet feedback
4
GS61004B
100V enhancement mode GaN transistor
Preliminary Datasheet
Electrical Performance Graphs
GS61004B I
DS
vs. V
DS
, T
J
dependence
GS61004B Gate Charge, Q
G
Characteristic
Figure 5: Typical I
DS
vs. V
DS
@ V
GS
= 6 V
Figure 6: Typical V
GS
vs. Q
G
GS61004B Capacitance Characteristics
GS61004B Stored Energy Characteristic
Figure 7: Typical C
ISS
, C
OSS
, C
RSS
vs. V
DS
Figure 8: Typical C
OSS
Stored Energy
Rev. 171101
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
© 2009-2017 GaN Systems Inc.
Submit datasheet feedback
5
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