Datasheet
WL-CSP
EEPROM family
BR25S128GUZ-W
(128K)
●General
Description
BR25S128GUZ-W is a 16K×8bit serial EEPROM of SPI BUS interface method.
●Features
High speed clock action up to 10MHz (Max.)
Wait function by HOLDB terminal
Part or whole of memory arrays settable as read only
memory area by program
1.7V to 5.5V single power source action most suitable
for battery use
64Byte page write mode useful for initial value write
at factory shipment
For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
Auto erase and auto end function at data rewrite
Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
Write prohibition by WP pin
Write prohibition block setting by status registers
(BP1, BP0)
Write mistake prevention function at low voltage
Data kept for 40 years
Data rewrite up to 1,000,000 times
Data at shipment Memory array: FFh, status register
WPEN, BP1, BP0 : 0
●Package
W(Typ.) x D(Typ.) x H(Max.)
VCSP35L2
2.00mm x 2.63mm x 0.40mm
●Page
write
Page
Part Number
●BR25S128GUZ-W
Capacity Bit format
128Kbit
16K×8
64Byte
BR25S128GUZ-W
Power source voltage
1.7V to 5.5V
VCSP35L2
●
○Product
structure：Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
1/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001
BR25S128GUZ-W
(128K)
Datasheet
●Absolute
Maximum Ratings
(Ta=25℃)
Parameter
Symbol
Supply Voltage
Power Dissipation
Storage Temperature
Operating Temperature
Terminal Voltage
V
CC
Pd
Tstg
Topr
‐
Ratings
-0.3 to +6.5
Unit
V
mW
℃
℃
1
Remarks
220 (VCSP35L2)
－65
to +125
－40
to +85
-0.3 to Vcc+0.3 *
Degradation is done at 4.5mW, for operation above 25℃.
V
*1 The Max value of Terminal Voltage is not over 6.5V.
●Memory
cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V)
Limits
Parameter
Min.
Typ.
Number of data rewrite times *1
Data hold years *1
*1 Not 100% TESTED
Max.
-
-
Unit
Times
Years
1,000,000
40
-
-
●Recommended
Operating Ratings
Parameter
Symbol
Power source voltage
Input voltage
Vcc
V
IN
Ratings
1.7 to 5.5
0 to Vcc
Unit
V
●Input
/ output capacity
(Ta=25°C, frequency=5MHz)
Parameter
Symbol
Min.
Input capacity *1
Output capacity *1
*1
Not 100% TESTED.
Max.
8
8
Unit
pF
V
IN
=GND
V
OUT
=GND
Conditions
C
IN
C
OUT
－
－
●Electrical
characteristics
(Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V)
Parameter
“H” Input Voltage1
“L” Input Voltage1
“L” Output Voltage1
“L” Output Voltage2
“H” Output Voltage1
“H” Output Voltage2
Input Leakage Current
Output Leakage Current
Symbo
l
VIH1
VIL1
VOL1
VOL2
VOH1
VOH2
ILI
ILO
ICC1
Operating Current Write
ICC2
ICC3
ICC4
ICC5
ICC6
Operating Current Read
ICC7
ICC8
ICC9
ICC10
Limits
Min.
0.7xVcc
-0.3
0
0
Vcc-0.2
Vcc-0.2
-1
-1
－
－
－
－
－
－
－
－
－
－
－
Typ.
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
Max.
Vcc+0.3
0.3xVcc
0.4
0.2
Vcc
Vcc
1
1
0.5
1
2
1
1
1.5
2
2
4
8
Unit
V
V
V
V
V
V
μA
μA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
Conditions
1.7≦Vcc≦5.5V
1.7≦Vcc≦5.5V
IOL=2.1mA, 2.5≦Vcc<5.5V
IOL=1.0mA, 1.7≦Vcc<2.5V
IOH=-0.4mA, 2.5V≦Vcc<5.5V
IOH=-100μA, 1.7≦Vcc<2.5V
V
IN
=0 to Vcc
V
OUT
=0 to Vcc, CSB=Vcc
Vcc=1.8V,fSCK=5MHz, tE/W=5ms
Byte Write，Page Write
Vcc=2.5V,fSCK=10MHz, tE/W=5ms
Byte Write，Page Write
Vcc=5.5V,fSCK=10MHz, tE/W=5ms
Byte Write，Page Write
Vcc=1.8V,fSCK=5MHz, SO=OPEN
Read, Read Status Register
Vcc=2.5V,fSCK=2MHz, SO=OPEN
Read, Read Status Register
Vcc=2.5V,fSCK=5MHz, SO=OPEN
Read, Read Status Register
Vcc=2.5V,fSCK=10MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V,fSCK=5MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V,fSCK=10MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V,fSCK=20MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V, CSB=Vcc, SCK=SI=Vcc or GND
HOLDB=WP=Vcc, SO=OPEN
Standby Current
ISB
2
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
2/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001
BR25S128GUZ-W
(128K)
Datasheet
●Operating
timing characteristics (Ta=-40°C to +85°C, unless otherwise specified, load capacity C
L
=30pF)
1.7≦Vcc<2.5V 1.8≦Vcc<2.5V 2.5≦Vcc≦5.5V
Parameter
Symbol
Unit
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
SCK frequency
SCK high time
SCK low time
CSB high time
CSB setup time
CSB hold time
SCK setup time
SCK hold time
SI setup time
SI hold time
Data output delay time
Output hold time
Output disable time
HOLDB setting setup time
HOLDB setting hold time
HOLDB release setup time
HOLDB release hold time
Time from HOLDB to output High-Z
Time from HOLDB to output change
SCK rise time
SCK fall time
OUTPUT rise time
OUTPUT fall time
Write time
*1 NOT 100% TESTED
*1
*1
*1
*1
f
SCK
t
SCKWH
t
SCKWL
t
CS
t
CSS
t
CSH
t
SCKS
t
SCKH
t
DIS
t
DIH
t
PD
t
OH
t
OZ
t
HFS
t
HFH
t
HRS
t
HRH
t
HOZ
t
HPD
t
RC
t
FC
t
RO
t
FO
t
E/W
-
125
125
250
100
100
100
100
30
50
-
0
-
100
100
100
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
-
-
-
-
-
-
-
-
-
125
-
200
-
-
-
-
100
100
1
1
100
100
5
-
80
80
90
60
60
50
50
20
20
-
0
-
0
20
0
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
-
-
-
-
-
-
-
-
-
80
-
80
-
-
-
-
80
80
1
1
50
50
5
-
40
40
40
30
30
20
20
10
10
-
0
-
0
10
0
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
-
-
-
40
-
40
-
-
-
-
40
40
1
1
40
40
5
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
ns
ns
ms
●AC
measurement conditions
Parameter
Load capacity
Input rise time
Input fall time
Input voltage
Input / Output judgment voltage
●Sync
data input / output timing
tCS
tCSS
tCS
Symbol
C
L
-
-
-
-
Limits
Min.
Typ.
Max.
-
-
30
-
-
50
-
-
50
0.2Vcc/0.8Vcc
0.3Vcc/0.7Vcc
Unit
pF
ns
ns
V
V
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tFC
CSB
SCK
tCSH tSCKH
SCK
tDIS tDIH
SI
SO
High-Z
SI
tPD
tOH
tRO,tFO
tOZ
High-Z
SO
Figure 1. Input timing
SI is taken into IC inside in sync with data rise edge of
SCK. Input address and data from the most significant bit
MSB
"H"
Figure 2. Input / Output timing
SO is output in sync with data fall edge of SCK. Data is
output from the most significant bit MSB.
CSB
"L"
tHFS
tHFH
tHRS tHRH
SCK
tDIS
SI
n+1
tHOZ
tHPD
High-Z
Dn+1
Dn
n
n-1
SO
Dn
Dn-1
HOLDB
Figure 3. HOLD timing
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
3/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001
BR25S128GUZ-W
●Block
diagram
(128K)
Datasheet
CSB
SC
K
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
VOLTAGE
DETECTION
WRITE
INHIBITION
SI
INSTRUCTION
REGISTER
ADDRESS
REGISTER
DATA
REGISTER
14bit
HIGH VOLTAGE
GENERATOR
HOLDB
ADDRESS
DECODER
R/W
AMP
14bit
131,072 bit
WP
EEPROM
8bit
8bit
SO
●Pin
Configuration
BOTTOM VIEW
1
A1
NC
B1
SI
B2
HOLDB
B3
Vcc
B
C1
GND
C2
SO
C3
CSB
C
D1
NC
D2
WP
D3
NC
D
2
A2
SCK
3
A3
NC
A
●Pin
Descriptions
Terminal
name
CSB
SO
Input/Output
Input
Output
Input
-
Input
Input
Input
-
Function
Chip select input
Serial data output
Write protect input
Write command is prohibited
Write status register command is prohibited
All input / output reference voltage, 0V
Start bit, ope code, address, and serial data input
Serial clock input
Hold input
Command communications may be suspended temporarily (HOLD status)
WP
GND
SI
SCK
HOLDB
Vcc
Power source to be connected
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
4/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001
BR25S128GUZ-W
(128K)
Datasheet
●Typical
Performance Curves
(The following characteristic data are Typ. Values.)
Figure 4. "H" Input Voltage VIH
(CSB,SCK,SI,HOLDB,WP)
Figure 5. "L" Input Voltage VIL
(CSB,SCK,SI,HOLDB,WP)
Figure 6. "L" Output Voltage VOL1(Vcc=2.5V)
Figure 7. "H" Output Voltage VOH1
(Vcc=2.5V)
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
5/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001
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